2009
DOI: 10.1016/j.jallcom.2007.12.021
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of m-plane ZnO thin film on γ-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

1
5
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 16 publications
1
5
0
Order By: Relevance
“…Crystal anisotropy can lead to optical anisotropy, thereby increasing blueshift and light transmittance of ZnO:Al:Mo films. This phenomenon has also been reported in previous studies [16][17][18]. That is, the c-oriented and parallel arrayed film has greater polarized optical transmittance and blueshift parallel with than perpendicular to the c-axis.…”
Section: Resultssupporting
confidence: 87%
See 1 more Smart Citation
“…Crystal anisotropy can lead to optical anisotropy, thereby increasing blueshift and light transmittance of ZnO:Al:Mo films. This phenomenon has also been reported in previous studies [16][17][18]. That is, the c-oriented and parallel arrayed film has greater polarized optical transmittance and blueshift parallel with than perpendicular to the c-axis.…”
Section: Resultssupporting
confidence: 87%
“…Furthermore, it is well-known that one-dimensional nanostructure and its reasonable array can induce special behavior for the materials and enhances certain electrical, optical, and mechanical properties of the materials. In this aspect, c-oriented ZnO films parallel to the substrate plane [11,12] or randomly arrayed on the substrate have shown wider band gap and stronger transmittance than randomly oriented films [13,14]. To induce onedimensional nanostructure, some long-chain organic molecules are generally used as template.…”
mentioning
confidence: 99%
“…In the same line, the deposited films showed a relatively high absorption coefficient of around 10 4 cm −1 and exhibited a direct transition gap which lies within 2.6-3.6 eV domain. It has been found that these materials were n-type and electrical measurements are in progress in order to reach the resistivity of such thin films [32][33][34][35][36][37][38][39][40][41]. This result is very encouraging since a costless and simple spray pyrolysis technique can be used to prepare such oxides and open the way of possible valorisation of the prepared films in many optoelectronic applications.…”
Section: Resultsmentioning
confidence: 92%
“…ZnO thin films have been prepared by various methods such as RF magnetron sputtering [5], molecular beam epitaxy (MBE) [6], metal organic chemical vapor deposition (MOCVD) [7], pulsed laser deposition (PLD) [8], spray pyrolysis [9] and the sol-gel process [10]. The ZnO thin films doped with some elements and prepared by sol-gel technique have now been especially paid attention owing to its advantages such as low cost, simple deposition procedure, easier composition control, low processing temperature, easier fabrication of large area films.…”
Section: Introductionmentioning
confidence: 99%