Characterization of low alpha emissivity system on electroplated solder bumps

Mistry, A.; Lee, S.; Enman, Cynthia; Carroll, Barry; Mitchell, Donald E.; Mathew, Varughese; Weeks, D.; Tucker, Mike C

doi:10.1109/ectc.2000.853427

Cited by 2 publications

(1 citation statement)

References 5 publications

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“…Each participant agreed to use their normal laboratory procedures to make at least 4 measurements of samples representing a low alpha (LA) and an ultralow alpha (ULA) material. Although one previous publication has presented counter efficiency measurements made at multiple sites [7], this is the first study to directly compare alpha counting measurements at multiple sites at emission levels pertinent to the semiconductor industry.…”

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confidence: 98%

Multicenter comparison of alpha particle measurements and methods typical of semiconductor processing

Wilkinson

Clark

Wong

et al. 2011

2011 International Reliability Physics Symposium

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Alpha counting measurement methods have been widely used in the semiconductor industry for many years to assess the suitability of materials for semiconductor production and packaging applications. Although a number of published articles describe aspects of this counting, a multicenter, comparative trial has not been carried out to assess the methodological accuracy of current methods. This paper reports on experience with a 9 center, international, round-robin style trial using a shared set of samples to quantify variability in alpha emission measurements. Four samples representing low and ultralow alpha materials were counted by each participating lab in a blinded trial. The consensus mean emissivity for low alpha material was estimated as 30.9 khr -1 -cm -2 with a range from 20.2 to 45.5, less than half of which can be attributed to counting uncertainty or other known sources of error. A strong correlation for replicate measurements within a lab was also observed supporting the conclusion that there are systematic variations in equipment or calibration among labs. Eleven of 23 measurements of ultralow alpha materials were within 1 standard deviation of the consensus mean and 7 were at or below background. The high level of counting uncertainty for these measurements is thought to be sufficient to mask any systematic variation similar to the low alpha observations. Comparison of the reported values with a standard calculation demonstrates that there are also differences in the interpretation of the values reported for emissivity and error, underscoring the need for careful interpretation of results.

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mentioning

confidence: 98%

Multicenter comparison of alpha particle measurements and methods typical of semiconductor processing

Wilkinson

Clark

Wong

et al. 2011

2011 International Reliability Physics Symposium

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High Shear Speed Characteristics of Sub-100 μm Low Alpha SAC105 Solder Bump Directly Fabricated on Cu Filled Through Si Via for 3D Integration

Jung¹,

Agarwal²,

Kumar³

et al. 2015

Journal of Microelectronics and Electronic Packaging

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Soft errors in microelectronics devices, responsible for the malfunction of electronic systems, have become a hot issue for miniaturized and high-density packaging like three-dimensional (3D) packaging. Low alpha solder generates very few α-radiation-caused errors and malfunction in electronic devices compared with regular solder. It can improve performance and reliability of through-Si-via (TSV) packaging, prompting the need to adopt low alpha solder for bumping in TSV packaging. TSV technology has emerged as a popular choice for 3D packaging and chip stacking. In this study, the bonding properties of low alpha solder on Cu-filled TSV were investigated. TSVs were fabricated in a Si wafer by deep reactiveion etching, and Cu was filled in the via by electroplating using the periodic pulse-reverse current waveform. Cu filling in the via was achieved in 4 h without any defects at a cathodic current density of −8 mA/cm2. The LC-3 class of a low alpha solder ball (alpha emission < 0.05 cph/cm2) having a composition of Sn-1.0 wt.% Ag-0.5 wt.% Cu (SAC105) and a diameter of 80 μm was reflowed on the Cu-filled TSV to form the solder bump. High-speed shear test was performed on the bumped low alpha solder ball to assess the shear strength and to investigate the fracture mode. The shear strength of the low alpha solder bump showed a maximum value of 369.63 mN at 1.0 m/s shearing speed and 17.6 μm tip height. The fraction of brittle fracture increased with increasing shearing speed.

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Characterization of low alpha emissivity system on electroplated solder bumps

Cited by 2 publications

References 5 publications

Multicenter comparison of alpha particle measurements and methods typical of semiconductor processing

Multicenter comparison of alpha particle measurements and methods typical of semiconductor processing

High Shear Speed Characteristics of Sub-100 μm Low Alpha SAC105 Solder Bump Directly Fabricated on Cu Filled Through Si Via for 3D Integration

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