Characterization of Line-Edge Roughness in Cu/Low-k Interconnect Pattern

Abstract

To establish a method of measuring interconnect line-edge roughness (LER), low-k line patterns were observed and electric field concentration was simulated on the basis of observation results. Wedge-shaped LERs were observed at the edges of low-k lines, and the bottom and the top widths of the average wedge feature were 60 and 7 nm (or smaller), respectively. Simulation showed that LER causes serious electric field concentration, which may cause the degradation of time-dependent dielectric breakdown (TDDB) lifetime at 100-nm-pitch Cu/low-k interconnects. The maximum electric field strength depends on the conventional LER metric 3R q , but depends more strongly on the wedge angle, the curvature of the tip. That is, other metrics such as wedge angle can predict fatal electric field concentration caused by LER than the conventional metric 3R q .