Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes

“…The spatial distributions of current density were performed by assuming axial symmetry of the structure (LEDs have a cylindrical shape with external radius R = 300 μm). Taking into account data [8] on the internal structure of InAsSb/InAs LEDs, the proposed model takes into account the three most important layers, which are characterized by their thicknesses and resistivities: p InAs substrate (d p , ρ π ), n InAsSb active layer (d al , ρ al ), and upper n InAsSbP spreading layer (d n , ρ n ). Calculations were performed for the following numer ical values of these parameters:…”

“…For this reason, we have studied mid IR LEDs based on InAsSb/InAs heterostructures, the production tech nology and main performance parameters of which are well known (see, e.g., [8,9]). This Letter presents the results of calculations of the IQE of InAsSb/InAs LEDs as a function of the injection level with allow ance for the current crowding effect.…”

Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition

“…On such setups, a wide composition range of InAsPSb solid solutions on InAs substrates at V/III = 100 [5] and GaInAsSb on GaSb substrates at V/III = 0.8-5 [6] were obtained. Other values of V/III for InAsPSb solid solutions grown at atmospheric pressure were also reported: V/III = 10.3 for InAs 0.65 P 0.24 Sb 0.11 [7] and V/III = 40 for InAs 0.27 P 0.5 Sb 0.23 [8,9].…”

“…On such setups, a wide composition range of InAsPSb solid solutions on InAs substrates at V/III = 100 [5] and GaInAsSb on GaSb substrates at V/III = 0.8-5 [6] were obtained. Other values of V/III for InAsPSb solid solutions grown at atmospheric pressure were also reported: V/III = 10.3 for InAs 0.65 P 0.24 Sb 0.11 [7] and V/III = 40 for InAs 0.27 P 0.5 Sb 0.23 [8,9].Low pressure MOCVD allows improving the qual ity of obtained epilayers due to increasing the unifor mity of distribution of components on the area, as well as decreasing the probability of parasitic reactions with adduct formation, as reported in [10], where perfect epilayers of GaInAsP solid solutions on InP substrates in the complete range lattice matched to InP compo sitions have been grown. Moreover, at low pressure MOCVD, the consumption of hydrides and metal organic compounds forming the epilayers decreases.…”