Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Roeckerath, M.; Heeg, T.; Lopes, J. M. J.; Schubert, J.; Mantl, S.; Besmehn, Astrid; Myllymäki, Pia; Niinistö, Lauri

doi:10.1016/j.tsf.2008.08.064

Cited by 32 publications

(17 citation statements)

References 8 publications

(11 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the following, we discuss the ALD characteristics, the surface chemistry, and the resulting film properties for Gd 2 O 3 . Gd 2 O 3 as well as lanthanoid oxides, lanthanoid aluminates, and lanthanoid‐doped hafnia have been the subject of intense research for micro‐ and optoelectronic applications due to their versatile dielectric and optical properties . The understanding of the ALD surface chemistry and the relation with film and deposition process properties are keys to the successful integration of Gd 2 O 3 thin films in micro‐ or optoelectronic devices .…”

Section: Introductionmentioning

confidence: 99%

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Han

Delabie

Franquet

et al. 2015

Chemical Vapor Deposition

View full text Add to dashboard Cite

The atomic layer deposition (ALD) of Gd 2 O 3 from tris(isopropyl-cyclopentadienyl) gadolinium (Gd( i PrCp) 3 ) and O 3 is studied as a function of the O 2 /N 2 ratio used to generate O 3 . ALD using O 3 with low N 2 content leads to the formation of a hydroxyl-terminated surface after combustion reactions during O 3 exposure followed by proton transfer and ligand release during the Gd( i PrCp) 3 half cycle. This condition leads to the presence of parasitic chemical vapor deposition (CVD) due to the hygroscopicity of Gd 2 O 3 . By contrast, long O 3 pulses with high N 2 content lead to the dehydroxylation of the surface and to the suppression of both the proton transfer during the Gd( i PrCp) 3 half cycle as well as the parasitic CVD reactions.

show abstract

Section: Introductionmentioning

confidence: 99%

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Han

Delabie

Franquet

et al. 2015

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…Amorphous thin films of these materials on Si substrates offer k values ranging from 23 to 32 [7][8][9][10][11][12], as well as large optical band gaps (>5 eV) and band offsets to silicon (2-2.5 eV) [13,14]. Additionally, due to their high crystallization onset temperatures ranging from 800°C to 1000°C, they show a great potential of integration into a gate first transistor scheme.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Lopes¹,

Özben²,

Schnee³

et al. 2011

ECS Trans.

View full text Add to dashboard Cite

The continuous downscaling in metal-oxide-semiconductor field effect transistors is approaching fundamental limits. Allied to new device architectures, novel materials are needed in order to continue the evolution of complementary metal-oxidesemiconductor technologies. The combination of high dielectric constant (k) oxides with silicon and other semiconductors having a higher charge carrier mobility (ex.: germanium) is currently a fundamental technologic issue that requires extensive investigation on materials science. The search for high-k oxides (with k > 20) that can offer stable interfaces combined with a low density of electrically active defects is a topic of major interest. In this contribution, we will review some of our results on the structural and electrical properties of REScO 3 (RE = La, Gd, Tb, Sm) and LaLuO 3 amorphous films on Si as well as on high mobility substrates, showing their potential as high-k dielectrics for future CMOS applications.

show abstract

“…ALD of lanthanum lutetium oxide thin film on p-doped Si substrates was achieved from [La(thd) 3 ] and [Lu(thd) 3 ] as metal sources and ozone as oxygen source (substrate temperature 300 ∘ C, pressure 2-3 mbar) 98 . The deposited films were amorphous, smooth (RMS roughness 0.3 nm), and conformal; they possessed additional oxygen as impurity and had a low = ∼17.…”

Section: B Rare-earth Elementsmentioning

confidence: 99%

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

Lang

Adner

Georgi

2016

Patai's Chemistry of Functional Groups

View full text Add to dashboard Cite

This chapter is an update of a review published by our group elsewhere in Patai's Series; in addition, in this volume, chapters present the recent advances in the deposition of metals and transition‐metal oxides, all derived from metal enolates. Materials featuring group 3 ‐ 12 elements have attracted great technological and scientific attention during the last decades because of their outstanding chemical and physical properties. They are widely used in industry, including a variety of catalyst supports, coatings, as dielectrics for semiconducting devices, and as sensors.

show abstract

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Cited by 32 publications

References 8 publications

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

Contact Info

Product

Resources

About

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Cited by 32 publications

References 8 publications

Ozone‐Based Atomic Layer Deposition of Gd2O3 from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Ozone‐Based Atomic Layer Deposition of Gd2O3 from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

Contact Info

Product

Resources

About

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Ozone‐Based Atomic Layer Deposition of Gd₂O₃ from Tris(isopropyl‐cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry