Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides

Chan, Seong Phun; Passaro, Vittorio M. N.; Lim, Soon Thor; Png, C. E. J.; Headley, William C.; Masanovic, Goran Z.; Reed, Graham T.; Atta, Ragheid M.H.; Ensell, G.; Evans, A G R

doi:10.1117/12.511138

Cited by 5 publications

(2 citation statements)

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“…1, which is a rib waveguide of silicon on silica and has an upper cladding that is air . SOI rib waveguides with an overall height of 1.00, 1.35, and 1.50 m are analyzed at a wavelength of 1.55 m, related to examples of design geometries used in our previous papers, such as silicon optical modulators [1], ring resonators [2], and waveguide-based Bragg gratings [3]. We have made the assumption of no coupling between the quasi-TE and quasi-TM modes.…”

Section: Single-mode Condition For Small-cross-section Waveguidesmentioning

confidence: 99%

“…The question arises as to whether the prime concern is to maintain similar losses for the TE and TM modes or to provide similar propagation constants in order to maintain similar phase performance for interferometric-based devices, because it is not generally possible to maintain both. In principle, waveguide birefringence can be removed by appropriate choice of rib-waveguide width-to-height ratio [3], [8] or by employing stress engineering [12] to tailor the thickness of SiO for polarization compensation. Similarly, as discussed previously, it is also possible to design a rib waveguide supporting only a single mode with an appropriate selection of the rib width and height [8], [9].…”

Section: Polarization Independencementioning

confidence: 99%

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Single-mode and polarization-independent silicon-on-insulator waveguides with small cross section

Chan

Png

Lim

et al. 2005

J. Lightwave Technol.

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Abstract-The fabrication restrictions that must be imposed on the geometry of optical waveguides to make them behave as single-mode devices are well known for relatively large waveguides, with shallow etch depth. However, the restrictions for small waveguides ( 1 m or less in cross section) are not well understood. Furthermore, it is usually a requirement that these waveguides are polarization independent, which further complicates the issues. This paper reports on the simulations of the conditions for both single-mode behavior and polarization independence, for small and deeply etched silicon-on-insulator (SOI) waveguides. The aim is to satisfy both conditions simultaneously. The results show that at larger waveguide widths, waveguide etch depth has little effect on the mode birefringence because the transverse-electric (TE) mode (horizontal-polarized mode) is well confined under the rib region. However, at smaller rib widths, the etch depth has a large influence on birefringence. An approximate equation relating the rib-waveguide width and etch depth to obtain polarization-independent operation is derived. It is possible to achieve single-mode operation at both polarizations while maintaining polarization independence for each of the waveguide heights used in this paper but may be difficult for other dimensions. For example, a 1-m SOI rib waveguide with an etch depth of 0.64 m and rib width of 0.52 m is predicted to exhibit such characteristics.

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Section: Single-mode Condition For Small-cross-section Waveguidesmentioning

confidence: 99%