CHARACTERIZATION OF IMPRINT BEHAVIOR FOR THE SrBi₂Ta₂O₉ THIN FILMS

Abstract

Imprint properties of SrBi 2 Ta 2 O 9 (SBT) have been studied with various situations. The hysteresis of SBT capacitor exhibited shift as holding the remnant polarization state and this shift increases with waiting time. Hysteresis curves have a negative shift tendency at the initial stage, which comes from the different electrode interface layers. As applied a bias voltage on the capacitor with the same direction of retained polarization, the shift became more serious because of more space charges accumulated at the interfaces. However, as applied the different direction for the retained remnant polarization and bias voltages, a competition on the imprint formed in the films. The retained polarization played an important role on the imprint as the applied bias is small, and the effect of bias became stronger with increasing the applied bias voltages.