Characterization of IGBTs for high-speed switches for laser applications

Kluge, Andreas; Güldner, H.; Gohler, L.

doi:10.1109/plasma.2013.6634863

Cited by 1 publication

(10 citation statements)

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“…To control the cascade a galvanically isolated Gate-Drive is necessary which takes the high dynamic gate voltage pulses of about 50 V to 80 V with pulse lengths of about 50 ns into account [7]. The rise time t r0-80 , measured between the voltage levels from 0 V to 80 V should be below 15 ns to obtain the desired output dynamics.…”

Section: Pulse Transformermentioning

confidence: 99%

“…The slopes of voltage and current were raised by a special gate drive strategy called Gate-Boosting by about one order of magnitude compared to the switching speed in classic power electronic applications. The result of [7] was that all investigated chips could reach the desired dynamics, whereas the 1200 V-IGBTs were preferred regarding switch peak current. The 1700 V-IGBTs showed a less dynamic switching behavior with smaller peak currents.…”

Section: Introductionmentioning

confidence: 99%

“…Recently different characterization and gate drive strategies for IGBTs have been published [2][3][4][5][6][7][8]. These led to promising results for a switching module made of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…These led to promising results for a switching module made of these devices. In [7] and [8] theoretical and practical IGBT-device selection aspects have been discussed extensively. The slopes of voltage and current were raised by a special gate drive strategy called Gate-Boosting by about one order of magnitude compared to the switching speed in classic power electronic applications.…”

Section: Introductionmentioning

confidence: 99%

“…In the second step the knowledge of the former publications [6][7][8] is expanded into the design and the comparison of different IGBT-based cascades for the nitrogen gas laser.…”

Section: Introductionmentioning

confidence: 99%

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IGBT-based switching modules for laser applications

Kluge

Gueldner

Trompa

et al. 2015

IEEE Trans. Dielect. Electr. Insul.

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This paper presents the design of IGBT-based switching modules for a nitrogen gas laser. First, the CC-topology, which drives the laser, is discussed and simulated. Simple models of the laser tube and the switch are presented. The comparison of the simulation with experimental data shows good accuracy. The results are used to discuss the influence of the parasitic inductance and the capacitances on the laser tube behavior. Cascades with an 11-cell series connection based on different IGBT-chips (1700 V and 1200 V) have been built up and measured. The focus of the design is the high speed synchronous switching of all switching cells. Therefore, the design of a pulse transformer-based gate drive and a symmetrization network is presented. The module equipped with the four parallel 1200 V/35 A-IGBTs per cell produces the highest switching power. Among the variants, the switch peak current is up to 700 A at blocking voltages of up to 13.2 kV in the real environment of the nitrogen laser. The switch current slope reaches up to 30 A/ns and the laser tube current up to 1.8 kA. The variant with 1200 V/35 A-IGBTs produces an output energy which is about 15 % higher compared to the former MCT-based switch. Furthermore, a modified CCtopology for lower blocking voltage is investigated. The IGBT-based switches are able to replace the MCT-switches in this application. Between the different switches a tradeoff has to be done between high output energy and the effort for the assembly.

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Section: Pulse Transformermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In the second step the knowledge of the former publications [6][7][8] is expanded into the design and the comparison of different IGBT-based cascades for the nitrogen gas laser.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations