Characterization of high electronic quality a-SiC:H films by μτ products for electrons and holes

Möhring, Hans‐Christian; Abel, C.-D.; Brüggemann, R.; Bauer, G.H.

doi:10.1016/s0022-3093(05)80252-2

Cited by 28 publications

(12 citation statements)

References 6 publications

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“…In Fig. 1(a) we present the temperature dependence of (µτ) e which is similar to the dependencies found in the numerous works [15][16][17][18][19][20] that reported the thermal quenching of σ ph in a-Si:H. This sensitization-associated behavior is strongly emphasized in Fig. 1(b) by the two features that characterize the γ e behavior, the superlinearity (i.e.…”

Section: Resultssupporting

confidence: 81%

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Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

et al. 2000

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We have shown recently that the temperature dependence of the phototransport properties can yield information regarding the state distribution in the forbidden gap of semiconductors. Of these properties the light intensity exponents of both, the majority carriers, γ e , and the minority carriers, γ h, were found to be very sensitive to the details of this distribution. In particular, noting that sub ½ values of the exponents are very unusual we have studied their origin in some a-Si:H materials. Finding experimentally such sub ½ values of γ h and running computer simulations of the recombination processes in a-Si:H led us to the conclusion that these low values are due to acceptor-like centers which have a relatively high capture coefficient for the holes. We attribute these centers to the unintentional oxygen doping in a-Si:H. We will show that the oxygen presence, usually ignored in the discussions of the phototransport properties of a-Si:H, appears to be, in many cases, the dominant factor in the properties of "intrinsic" a-Si:H.

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Section: Resultssupporting

confidence: 81%

“…For the present work we apply the above tool for the study of the non-monotonic σ ph (T) dependence that has been found in numerous works on a-Si:H [14][15][16][17][18][19]. This dependence is associated with the thermal quenching effect (i.e.…”

Section: Introductionmentioning

confidence: 91%

Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

et al. 2000

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“…The steady-state photocarrier grating technique ͑SSPG͒ 3,4 has proved to be a very useful method for the characterization of the minority carrier properties of thin film semiconductors such as hydrogenated amorphous silicon (a-Si:H) and its alloys [5][6][7][8][9][10][11] and application to nc-Si has been reported 12 and is promising. In this letter, we first report on the observation of low quality optical gratings in nc-Si thin films and identify elastic optical scattering at the rough surface of the nc-Si film as the cause.…”

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confidence: 99%

Improved steady-state photocarrier grating in nanocrystalline thin films after surface-roughness reduction by mechanical polishing

Brüggemann

1998

Applied Physics Letters

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We detect elastic optical scattering resulting from the surface roughness of nanocrystalline silicon by a poor optical grating in the steady-state photocarrier grating experiment. The small variation of the experimental sampling function reduces the reliability of the ambipolar diffusion length measurements in this case. We demonstrate that the reduction in surface roughness of nanocrystalline silicon by polishing reduces optical scattering, improves the grating quality, and allows a reliable determination of the ambipolar diffusion length, making the experiment attractive for characterizing nanocrystalline silicon and other semiconductors which exhibit optical scattering.

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“…In the whole T range, only a small decrease of (mt) p with decrease in T is observed. In comparison, (mt) p for a-Si : H [19] is shown for a T range in which the value varies by a factor of 10. In the same range the value of (mt) p for mc-Si : H varies by a factor of 2.…”

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confidence: 99%

“…Corresponding author, e-mail: rudi.brueggemann@uni-oldenburg.de Temperature dependence of the hole mobility-lifetime product of mc-Si : H. In comparison, results for a-Si : H are shown, taken from the literature[19] …”

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confidence: 99%

Temperature Dependence of the Minority-Carrier Mobility-Lifetime Product for Probing Band-Tail States in Microcrystalline Silicon

Brüggemann

Kunz

2002

phys. stat. sol. (b)

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Characterization of high electronic quality a-SiC:H films by μτ products for electrons and holes

Cited by 28 publications

References 6 publications

Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

Improved steady-state photocarrier grating in nanocrystalline thin films after surface-roughness reduction by mechanical polishing

Temperature Dependence of the Minority-Carrier Mobility-Lifetime Product for Probing Band-Tail States in Microcrystalline Silicon

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