Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates

Abstract

Epitaxial CuIn3Se5 layers were grown on CuInSe2/Si(111) substrates by molecular beam epitaxy. Photoemission spectra of (112)-oriented CuIn3Se5 and CuInSe2 epitaxial layers were studied and the structures in the upper valence band are correlated with the Cu 3d and Se 4p density of states. The main valence band of CuInSe2 exhibits the three peak structure (consistent with theory) while a broadband with a shoulder is observed for the CuIn3Se5 phase. Electron channeling and x-ray diffraction confirmed the epitaxial growth of (112)-oriented layer. Surface and bulk composition analyses, position of valence band maxima, and a Se related vibrational mode at 153 cm−1 in Raman scattering measurements established the growth of the CuIn3Se5 phase.

Interaction of Atomic Hydrogen with the Surface of Cu-llII-V12 Chalcopyrite Semiconductors-A Method for Controlled Stoichiometry Variation

“…We conclude, therefore, that the microstructure of the modified layer could be characterised by domains on a nanometer scale. In contrast to previous reports [ 10,11,12], the 13-phase related Raman band of our hydrogenated sample is not centered at 154 cm-, but shifted to 148cm'. Moreover, this shift is correlated to the hydrogenation conditions.…”

“…One is the CuInSe 2 ion laser are labeled as (*). compounds (OVC or 13-phase) in the In-rich Cu-In-Se system, such as Cu 2 1n 4 Se 7 and Culn 3 Se5 [10,11,12]. The polarisation dependence of this band implies that most of its intensity belongs to F, symmetry, as reported for OVC compounds in [ 12].…”

Chemical incorporation of copper into indium selenide thin‐films for processing of CuInSe2 solar cells

“…No copper selenide peaks are observed in this spectrum, however, a broad peak was present in the region 153-155cm -1 . The defect chalcopyrite compound CuIn 3 Se 5 exhibits an A1 vibrational mode in this frequency range and is identified as a secondary phase in the selenized layers [24]. When the selenization was interrupted at 250°C, no indium selenide peaks were observed in the Raman spectrum, however two new peaks were present at 263 and 275cm -1 .…”

Structural and optical properties of AgIn5S8 films prepared by pulsed laser deposition

“…The physical characteristics of these materials can be changed by obtaining solid solutions based on these compounds [1]. However, on cuts of A I -B III -C VI systems alongside with A I B III C VI 2 compounds there are also ordered phases with the general formula A I B III 5 C VI 8 [4,5] which should also be considered as an effective approach in preparation of materials with required electrical and optical properties. Physical characteristics of such phases are still investigated insufficiently and in this connection their practical potential up to the end is not found yet.…”