Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

Kato, Hiromitsu; Nango, T.; Miyagawa, Takeshi; Katagiri, Takeshi; Ohki, Y.

doi:10.1109/iwgi.2001.967575

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)

DOI: 10.1109/iwgi.2001.967575

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Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

Hiromitsu Kato

T. Nango²,

Takeshi Miyagawa³

et al.

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Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

Cited by 1 publication

References 9 publications

Low-Temperature Deposition of Hafnium Silicate Gate Dielectrics

Low-Temperature Deposition of Hafnium Silicate Gate Dielectrics

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