Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode

Surucu, O.

doi:10.1007/s10854-019-02286-w

Cited by 9 publications

(1 citation statement)

References 47 publications

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“…The barrier height value found for high temperature region is very close to the band gap of Si, while the one found for low temperature region is lower than the known the band gap of Si. Therefore, varying barrier height values for different temperature regions are associated with lateral barrier inhomogeneity at the metal semiconductor interface [37][38][39]. This instance demonstrates that thermionic emission (TE) controls current transport at temperatures over 180 K, whereas thermionic field emission (TFE) controls current transport at temperatures below 160 K [1,2,[40][41][42].…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface

et al. 2022

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In this study, the electrical properties of Au/(SnS doped PVC)/n-Si structures were investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by 20K steps). Some of the basic electrical parameters such as ideality factor (n), saturation current (I0), and barrier height (bo) were obtained. When these parameters were extracted using thermionic emission (TE) theory, it was found that the value of n decreases whereas bo increases with increasing temperature. This result can be explained by the barrier height (BH) inhomogeneity. The observed two linear regions in the plots of Φbo–n, Φbo–(1/2kT)1 and (n−1 - 1)–(1/2kT) in temperature regions of 80–160K and 80–340K form an evidence to the presence of Double Gaussian distribution (DGD). Using the plot of Φbo–(1/2kT), the values of mean BH ( ) and standard deviation (σS) were found as 0.486 eV and 66 mV for first region, and 0.984 eV and 139 mV for second region, respectively. Thus, the effective Richardson constant (A*) was obtained using the interception point of the modified Richardson plot for these regions as 7.013x10-6 A.K-2cm-2 and 88.12 A.K-2cm-2, respectively. It is clear that A* value for second region is closer to theoretical value (=112 A.K-2cm-2 for n-Si). Finally, the energy dependent profile of the surface-states (Nss) was extracted using Card-Rhoderick method and Nss was found to range from ~1012 (at 80K) to 1013 eV-1 cm-2 (at 340K).

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