2018
DOI: 10.1002/jrs.5375
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Characterization of graphene grown on copper foil by chemical vapor deposition (CVD) at ambient pressure conditions

Abstract: In the aim to get high quality graphene films, with large domains and free from impurities, minimizing also the manufacturing costs, we investigate the graphene grown on copper (Cu) foil by chemical vapor deposition at ambient pressure conditions, by using methane (CH4) as carbon source, diluted in a suitable mixture of argon (Ar) and hydrogen (H2). Several graphene samples were synthesized, for variable exposure times to hydrocarbon precursor, in the range from 1 min to 1 hr. The quality of the graphene films… Show more

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Cited by 22 publications
(16 citation statements)
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“…Color differences appear also to the optical microscope (see Fig. 1(b)), in similar way to previous observations made for ambient pressure CVD graphene on copper [35]. In the present case, comparable size of the "dark" and "bright" areas (10 3 -10 4 μm 2 ) are observed.…”
Section: Methodssupporting
confidence: 91%
“…Color differences appear also to the optical microscope (see Fig. 1(b)), in similar way to previous observations made for ambient pressure CVD graphene on copper [35]. In the present case, comparable size of the "dark" and "bright" areas (10 3 -10 4 μm 2 ) are observed.…”
Section: Methodssupporting
confidence: 91%
“…In this way, the specific effect of the substrate on graphene‐based films nanoarchitecture can be assessed, because identical deposition and heating processes are used for both substrates. The films are usually characterized by Raman microspectroscopy, a recognized technique for investigating the nanostructure, crystallite size, defects, and number of layers in graphene materials . Specifically, surface mapping of the Raman signal is performed to accurately assess the homogeneity of the samples at the micrometric scale.…”
Section: Introductionmentioning
confidence: 99%
“…The broad XPS spectrum clearly shows a C1s peak at about 284.5 eV, an O1s peak at about 531 eV, a Cu LMM peak at about 570 eV, a Cu 2p 3/2 peak near 932 eV, and a Cu 2p 1/2 peak at about 951.2 eV. The presence of oxygen is caused by the migration of oxygen dissolved in the interior of the copper foil to the surface during growth, and the results of the graphene films prepared under different conditions are almost the same [36]. Figures 4(b)-(d) show the XPS spectra of the photoelectron-emitting graphene film of the C1S nuclear level peak under different growth conditions (800°C, 700°C, 600°C), the peak consisting of two components, The carbon bond group is hybridized by SP 3 at a binding energy of 284.5 eV, C=C SP 2 bond in the graphite network, and another at 285.6 eV.…”
Section: Characterization Of Graphenementioning
confidence: 87%