Characterization of graphene films grown on CuNi foil substrates

Tyagi, Parul; Robinson, Zachary R.; Munson, Andrew; Magnuson, Carl W.; Chen, Shanshan; McNeilan, J.D.; Moore, Richard; Piner, Richard D.; Ruoff, Rodney S.; Ventrice, Carl A.

doi:10.1016/j.susc.2014.11.019

Cited by 15 publications

(9 citation statements)

References 36 publications

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“…Another way to probe film architecture is based on the approach proposed by Tyagi et al . 70 from angular resolved XPS (ARXPS). These authors showed that ARXPS can be used to accurately determine the average thickness of the graphene films, as long as the growth proceeds layer-by-layer.…”

Section: Resultsmentioning

confidence: 99%

“…From the ARXPS intensity of a graphene monolayer sample with respect to a highly-ordered pyrolytic graphite (HOPG) sample (which can be approximated as an infinite number of graphene layers), Tyagi et al . 70 quantified the attenuation length of the C1 photoelectrons, depending on the photoelectron emission angle. A stepwise model for the C1 photoelectron intensity was then developed by the authors, which uses the experimentally derived attenuation length, to determine the graphene thickness of a film of arbitrary thickness.…”

Section: Resultsmentioning

confidence: 99%

“…The average thickness of graphene films was determined with angle-resolved X-ray spectroscopy measurements using the formalism of Tyagi et al . 70 . It is worth noting that our measurements were acquired using a type of spectrometer that simultaneously collects several photo-electron emission angles over a 60° range without tilting the sample.…”

Section: Methodsmentioning

confidence: 99%

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Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

Maddi

Bourquard

Barnier

et al. 2018

Sci Rep

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New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped ‘few-layer’ graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

Maddi

Bourquard

Barnier

et al. 2018

Sci Rep

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“…The morphology variation induced by the use of different CH4 flows is quantified in Figure 4a, where the coverage fractions xn of 0-(uncovered Ge), 1-, 2-and 3-LG regions, as determined by the analysis of SEM and AFM images, are reported as a function of F. The xn values are further validated by the analysis of the XPS data. As a matter of fact the integrated intensity (IC) of the C1s peak of each sample normalized to that measured on a commercial SLG (IC SLG ) is related to the coverage fractions xn by the expression: (1) where n is the number of the graphene layers, lef f =lcosϑ=3.2 monolayers 30 is the effective electron escape depth, ϑ=30° is the detection angle, i.e. the angular displacement of the detector slit measured respect to the normal to the sample surface.…”

Section: Ch4 Flow Influence On the Growth Kineticsmentioning

confidence: 99%

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

Scaparro

Mišeikis

Coletti

et al. 2016

ACS Appl. Mater. Interfaces

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Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using μ-Raman spectroscopy, X-ray photoemission spectroscopy, scanning electron microscopy, and atomic force microscopy. We find that by simply varying the carbon precursor flow different growth regimes yielding to graphene nanoribbons, graphene monolayer, and graphene multilayer are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.

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“…So, in the present study, we use a metal catalyst to obtain graphene layers with a low defect concentration. Several catalysts including nickel, copper, cobalt, copper-nickel alloy catalyst [15][16][17][18][19][20] have been used to obtain graphene from the carbon film precursor. Several studies have reported the growth of graphene by PLD using nickel catalyst [21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance

Bleu

Bourquard

Gartiser

et al. 2019

Materials Chemistry and Physics

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Here we report the low-defect synthesis of bilayer graphene film on SiO 2 with a nickel catalyst using pulsed laser deposition combined with rapid thermal annealing. A parametric study was performed with various initial amorphous carbon (a-C) film thicknesses and annealing temperatures and a fixed nickel catalyst film thickness. Raman spectra and mapping over large areas of up to 100 × 100 μm² were used to investigate the structure and the defects of graphene films. Optimal conditions for graphene growth were an initial a-C film thickness of 2 nm and an annealing temperature of 900°C. Results showed that 76% of the optimized film contained graphene bilayers, and 18% of the optimized film contained graphene monolayers. A transmittance of 87% at 550 nm is observed without any transfer process from the SiO 2 substrate. This paper presents experimental guidelines for optimal synthesis conditions to control graphene growth by pulsed laser deposition.

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Characterization of graphene films grown on CuNi foil substrates

Cited by 15 publications

References 36 publications

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance

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