Characterization of focused ion beam induced deposition process and parameters calibration

Fu, Yongqi; Bryan, Ngoi Kok Ann; Shing, Ong Nan

doi:10.1016/s0924-4247(00)00490-8

Cited by 22 publications

(11 citation statements)

References 7 publications

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“…14 The IBID deposited films from W(CO) 6 and Ga-source FIB are commonly available options in commercial FIB facilities, and therefore their physical and structural characteristics have been extensively studied in the past. [15][16][17][18][19][20][21][22][23] However, their properties at low temperatures have not been reported before this work. In these deposition conditions, the nominal film composition is expected to be mainly Tungsten metal, which has a superconducting transition temperature of 0.01 K for bulk single crystals.…”

mentioning

confidence: 85%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

142

165

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Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO) 6 , as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is J c = 1.5 10 5 A/cm 2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.

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mentioning

confidence: 85%

Focused-ion-beam-induced deposition of superconducting nanowires

Sadki¹,

Ooi²,

Hirata³

2004

Applied Physics Letters

142

165

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“…In this case, a large spot size corresponds to a large beam current intensity that produces less deposition yield (volume/ion dose). 11 It also leads to the irregular periphery of the deposited area. The extreme difference of deposition from edge to center is caused by the lack of the material that will be decomposed from precursor gas.…”

Section: Resultsmentioning

confidence: 99%

“…Several studies about the relation of beam setting parameters and dwell time have been done. [6][7][8][9][10][11][12][13] Using an energetic (30kV) gallium ion beam and changing beam current for the beam setting conditions, this study investigates the influence of on-target beam control parameters with respect to the deposited dimensions and shapes. The possible working range is considered as appeared effects by adjusting on-target beam control the test deposition process.…”

Section: Introductionmentioning

confidence: 99%

Comparative studies of parameters calibration for focused ion beam deposition

Kim

Synn²,

Kim

2010

Int. J. Precis. Eng. Manuf.

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This paper describes the interaction between operating parameters of target wafer surface. We use an organometallic (C) precursor gas in the focused ion beam deposition process. Under the beam intensity conditions (30kV), the influences of the on-target beam control parameters, such as dwell time, beam spacing, minimum frame time and scan type, were investigated by the deposition tests. The analysis was carried out with the variation of dimensions and shapes of the single pattern. The operating parameters considered in this research are implemented in the next double-patterning deposition. The test presented how their interaction appeared on the processing results. The analysis configured out the FIB induced deposition of single pattern with the variation of operating parameters. Additionally the result shows that the sequent beam job influenced the double-patterning deposition significantly. On-beam target conditions should be optimized for the target complicated shapes and high aspect-ratios.

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“…The gas enters the FIB chamber through the gas injector system with a nozzle of diameter ∼250 μm. The impinging Pt precursor gas molecules possess a finite probability (represented by sticking coefficient) 13 to stick on the surface of the C nanowire. The primary electrons (PE) in the FEB system irradiating on the C nanowire undergoes elastic and inelastic collisions with the C atoms to generate secondary electrons (with typical energy <50 eV).…”

Section: B Fabrication Of the Pt Shell Around The C Nanowire Corementioning

confidence: 99%

Spatially resolved energy dispersive x-ray spectroscopic method for in-situ evaluation of mechanical properties during the growth of a C - Pt composite nanowire

Banerjee

2014

AIP Advances

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A core-shell type C-Pt composite nanowire is fabricated using focused ion and electron beam induced chemical vapor deposition techniques. Using information from spatially resolved energy dispersive x-ray spectra, we detect the resonance vibration in the C-Pt composite nanowire. We use this method to measure the Young's moduli of the constituents (C, Pt) of the composite nanowire and also estimate the density of the FEB CVD grown Pt shell surrounding the C core. By measuring the resonance characteristics of the composite nanowire we estimate a Pt shell growth rate of ∼0.9 nms−1. The study is analyzed to suggest that the Pt shell growth mechanism is primarily governed by the sticking coefficient of the organometallic vapor on the C nanowire core.

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Characterization of focused ion beam induced deposition process and parameters calibration

Cited by 22 publications

References 7 publications

Focused-ion-beam-induced deposition of superconducting nanowires

Focused-ion-beam-induced deposition of superconducting nanowires

Comparative studies of parameters calibration for focused ion beam deposition

Spatially resolved energy dispersive x-ray spectroscopic method for in-situ evaluation of mechanical properties during the growth of a C - Pt composite nanowire

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