Characterization of Fluoropolymer Resist for 157-nm Lithography

Hagiwara, Toru; Irie, Shigeo; Itani, Toshiro; Kawaguchi, Yasuhide; Yokokoji, Osamu; Kodama, S.

doi:10.2494/photopolymer.16.557

Cited by 9 publications

(5 citation statements)

References 7 publications

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“…Oxime derivatives are useful photo-reactive compounds for photo-acid generators (PAGs) [1] and other photo-initiators [2,3], which are initiated by N-O bond cleavage in high quantum yield. We have focused the reactions and sensitization of oxime type PAGs [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Oxime Type Photoacid Generators Having Adamantyl and Superstrong Acid Precursor Group

Yamamoto

Takahara

2018

J. Photopol. Sci. Technol.

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Oxime derivatives, having a N-O bond in the molecule structure, are excellent photo reactive compounds.Oxime type photoacid generaters with adamantyl and perfluoroalkylsulfonyloxy groups and without aromatic groups were prepared, and their absorption spectra and thermal properties were measured. The compounds designed with photoacid generator in deep ultraviolet (DUV) region have good transparency in the region. The thermal stability of these PAGs depended on the chain length of acid precursor groups. The quantum yields of acid generation were substantially high. These aliphatic oxime sulfonates can be expected to be PAGs in DUV.

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Section: Introductionmentioning

confidence: 99%

Oxime Type Photoacid Generators Having Adamantyl and Superstrong Acid Precursor Group

Yamamoto

Takahara

2018

J. Photopol. Sci. Technol.

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“…1 . Fluoropolymer resists less absorbent at 157 nm have therefore been developed, [2][3][4][5] and pattern transfer processes for 157-nm lithography have been evaluated. [6][7][8][9] The use of thin resists (less than 200 nm thick) and the relatively low reactive ion etching (RIE) durability of fluoropolymer resists (which are etched 1.4-2.0 times faster than conventional polyhydroxystyrene-based resists) make the pattern transfer process difficult.…”

Section: Introductionmentioning

confidence: 99%

Advances in resist pattern transfer process using 157-nm lithography

Furukawa¹,

Hagiwara²,

Kawaguchi³

et al. 2004

SPIE Proceedings

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The bilayer process we developed for 157-nm lithography uses a fluorine-containing silsesquioxane-type resist (F-SSQ). Gate fabrication is done by using a F-SSQ(90 nm)/organic film(200 nm)/poly-Si(150 nm)/SiO 2 (10 nm)/Si structure. The organic film works well as an anti-reflecting layer. Using a microstepper with a numerical aperture of 0.90 and optimizing the resist thickness, we made a 50-nm 1:1 line-and-space (L/S) pattern by using an alternative phase-shifting mask and made a 45-nm SRAM by using a chromeless phase lithography mask. Neither resist pattern footing nor undercutting was observed on the organic film. The reactive ion etching (RIE) selectivity between the F-SSQ and the organic film was sufficient (about 7), the resist pattern was transferred to the underlayer, and both 50-nm 1:1 L/S and 45-nm SRAM gate patterns were made using the organic film as an etching mask. Contact hole (C/H) fabrication is done by using a F-SSQ(105 nm)/organic film(400 nm)/tetraethyl orthosilicate (TEOS)-SiO 2 (1200 nm)/Si structure, and we made a 75-nm 1:1 C/H pattern by using the microstepper with a binary mask. The RIE selectivity was sufficient (about 15) for making high-aspect-ratio contact holes, and we made a 75-nm 1:1 C/H pattern in 1200-nmthick TEOS. This bilayer process is thus promising for making 65-nm-node semiconductor devices.

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“…Oxime esters have been known to be excellent photo-radical [2], photo-base [3] and photo-acid generators (PAGs) [4] to be started by the N-O bond cleavage in high yield. We studied sensitization reaction and the application of O-acyloximes [5,6] and N-acyloxyphtalimides [7][8][9], and found an oxime type PAG, (Z,E)-2-(4-methoxyphenyl)-2-[(4-methylphenyl -sulphonyl)oxyimino]-acetonitrile (PAIOTos, Fig.…”

Section: Introductionmentioning

confidence: 99%

“…1), has a high quantum yield of acid generation in the sensitization reaction. On the other hand, the non-ionic PAGs, oxime sulfonates, tried to apply for the ArF (193 nm) [10] and 157-nm [4] lithography. In the reference [4], for example, PAIOTos was evaluated as a PAG in a monocyclic polymer with blocking groups with an alicyclic structure.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the non-ionic PAGs, oxime sulfonates, tried to apply for the ArF (193 nm) [10] and 157-nm [4] lithography. In the reference [4], for example, PAIOTos was evaluated as a PAG in a monocyclic polymer with blocking groups with an alicyclic structure. They concluded that the compounds to generate 4-methylbenzenesulfonic acid, which has a lower acidity than perfluoroalkylsulfonic acids do, gave poor resist patterns.…”

Section: Introductionmentioning

confidence: 99%

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Oxime Type Photoacid Generators Having Adamantyl Group

Wada

Yagi

Hase

et al. 2015

J. Photopol. Sci. Technol.

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Oxime esters have been known to be excellent photo-acid generators (PAGs). However, the behaviors of alicyclic oxime esters to act as PAG have yet to become clear. Some oxime esters with adamantly groups were prepared, and their spectra and thermal stabilities were measured. The quantum yields of acid generation ( acid ) in acetonitrile were measured. These PAGs were then evaluated for lithography materials with a base polymer. They have a good transparency in DUV areas. These physical properties and the performance of PAG depended on the acid precursor group and the substitution group at the C atom of C=N-O part in the oxime esters.

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Characterization of Fluoropolymer Resist for 157-nm Lithography

Cited by 9 publications

References 7 publications

Oxime Type Photoacid Generators Having Adamantyl and Superstrong Acid Precursor Group

Oxime Type Photoacid Generators Having Adamantyl and Superstrong Acid Precursor Group

Advances in resist pattern transfer process using 157-nm lithography

Oxime Type Photoacid Generators Having Adamantyl Group

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