Characterization of films and interfaces in n-ZnO/p-Si photodiodes

Lee, J.Y.; Choi, Y. S.; Choi, Woo-Young; Yeom, H. W.; Yoon, Young-Joong; Kim, J.H.; Im, Seongil

doi:10.1016/s0040-6090(02)00742-3

Cited by 60 publications

(28 citation statements)

References 14 publications

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“…Figure A‐B show the XRD spectra of ZnO and AZO thin films, the obviously diffraction peak (002) observed from XRD pattern indicates ZnO preferential growth with (002) orientation. From Figure it can be seen that the diffraction peaks of films are tremendously affected by annealing process, indicating annealing can significantly improve the quality of the film, which is consistent with Lee's conclusion . Figure B shows the diffraction peak of Si–O bond of AZO annealed at 500°C is stronger than that of others, it can be speculate that the Si–O bonds are more abundant in AZO film at 500°C annealed temperature.…”

Section: Experiments and Analysissupporting

confidence: 80%

Optoelectronic performances on different structures of Al‐doped ZnO

Liu

Yang

2018

J Am Ceram Soc

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ZnO films and Al‐doped ZnO (AZO) films were deposited on p‐Si substrate by magnetron sputtering to investigate its chemical composition, structural and photoelectric properties. XRD and FTIR show that Al ions can enter into the substitutional and interstitial site of ZnO crystal, and O atoms in AZO films are more abundant. Three different structures of Al‐doped ZnO (substitutional Al, interstitial Al, and O‐rich Al‐doped ZnO) were built using first‐principles method based on experimental results, charge density difference, and density of States (DOS) illustrate that there are strong ionic interactions between Al and O atoms in substitutional Al‐doped ZnO, moreover, substitutional and interstitial Al doping both are beneficial to N type, but oxygen‐enriched ZnO is not conducive to N type. Furthermore, the optical properties of 3 different Al‐doped ZnO structures were investigated respectively. Compared with pure ZnO, the real and imaginary part of dielectric function of O‐rich and interstitial Al have a significant increase and move to lower energy (red shift), the reflectivity of O‐rich is 3 times of pure ZnO and substitutional Al‐doped ZnO. The results are hoped to be helpful to study AZO thin film and predict the properties of Al‐doped ZnO.

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Section: Experiments and Analysissupporting

confidence: 80%

Optoelectronic performances on different structures of Al‐doped ZnO

Liu

Yang

2018

J Am Ceram Soc

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“…Light emission has been demonstrated [1][2][3][4][5][6][7][8][9][10][11][12][13] in heterojunction light-emitting diodes (LEDs) using n-type ZnO and various other materials for the p-layer. However, development of higher-efficiency, homojunction devices [14] has been limited by the lack of reliable p-type ZnO which is necessary to produce p-n structures.…”

Section: Introductionmentioning

confidence: 99%

Persistent n-type photoconductivity in p-type ZnO

Claflin

Look

Park

et al. 2006

Journal of Crystal Growth

113

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“…The defective SiO x oxide layer located in the depletion region of the p/n junction would block the collection of the carriers generated at the p-Si by the photodiode and it would also cause the large current leakage. 9 Second, the increasing gain size decreases the electrically active grain boundaries as well as the electron scattering by the defects. So, the electron mobility is increased.…”

Section: Methodsmentioning

confidence: 99%

Influence of ZnO homobuffer layer on n-ZnO/p-Si photodiode

Qi¹,

Li²,

Zhao³

et al. 2008

Materials Science and Technology

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We investigate the n-ZnO/p-Si heterojunction photodiodes which were fabricated by pulsed laser deposition of ZnO films on p-Si substrate. A ZnO thin layer deposited at 200uC in oxygen free ambient was used as a buffer layer for the subsequent ZnO growth. The influence of ZnO homobuffer layer on n-ZnO/p-Si photodiode was studied. The results obtained by X-ray diffraction and atomic force microscopy showed that ZnO film with a homobuffer layer had better crystallinity and a smoother surface than the film without the buffer layer. As characterised by current-voltage (I-V) measurements, the dark leakage current of the buffered sample decreased significantly. Under Xe arc lamp illumination of 670 nm, photoresponsivity of 0 . 28 A W 21 and quantum efficiency of 48% at 5 V reverse bias were obtained from the photodiode with ZnO homobuffer layer.

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Characterization of films and interfaces in n-ZnO/p-Si photodiodes

Cited by 60 publications

References 14 publications

Optoelectronic performances on different structures of Al‐doped ZnO

Optoelectronic performances on different structures of Al‐doped ZnO

Persistent n-type photoconductivity in p-type ZnO

Influence of ZnO homobuffer layer on n-ZnO/p-Si photodiode

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