Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing

Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

“…11,12 Suitable photoconductive materials for photomixing must exhibit high dark resistivities, high carrier mobilities, and short carrier lifetimes. 13 Early and current photomixer work focused primarily on low-temperature-grown (LTG) GaAs 14 or superlattices of epitaxially-embedded self-assembled nanoparticles of ErAs [15][16][17] and LuAs [18][19][20] in GaAs. Development of fast photoconductive materials with smaller bandgaps, such as In 0.53 Ga 0.47 As, would benefit greatly from the mature telecommunication component infrastructure available at 1550 nm.…”

Review of terahertz photoconductive antenna technology

“…110 GaAs embedded superlattices of rare-earth arsenides of ErAs and LuAs were used in CW photomixing in plasmonic PCAs. 66 In all cases, the rare-earth arsenidebased photomixers outperformed LT-GaAs photomixers at operation frequencies below 1 THz, though output power was higher in LT-GaAs for higher frequencies. 66 Collier et al 111 fabricated THz PCAs on InP to study the effects of surface roughness on the THz emission.…”

“…Detection of the emitted THz pulses is often accomplished either through the use of calibrated THz power detectors, such as bolometers 34,55,[66][67][68][69] and pyroelectric detectors, 10,[70][71][72][73][74] or more completely by electro-optic sampling of the THz pulse in a time-domain spectroscopy (TDS) configuration. 8,43,44,48,72,75 The later method allows extraction of the temporal profile of the THz field.…”

“…Although GaAs and InGa(Al)As are the most widely studied material systems for THz PCA development, several other group III-V materials have been investigated as well. 66,[108][109][110][111]119,120 THz emission in antimony (Sb) based materials, such as InSb, 108 GaAsSb, 109 GaSb, 119 and GaInSb, 120 has been studied by several groups, although only the work of Sigmund et al 109 fabricated and characterized THz PCAs on the material. 1-THz bandwidths were observed in a THz TDS system utilizing GaAsSb material in the PCA emitter and detector, although more study of the growth conditions is needed to fully evaluate the potential of this material for THz PCAs.…”

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

“…14,15 Candidate photoconductive materials are characterized by high resistivities, high carrier mobilities, and short carrier lifetimes. 16 Previous and current photoconductive materials work has focused mainly on low-temperaturegrown (LTG) GaAs, 17 superlattices of epitaxially embedded ErAs [18][19][20] and LuAs [21][22][23] nanoparticles in GaAs, and co-deposited nanoparticles of ErAs in a dilute-bismide matrix of GaAsBi. 24 The recent ErAs:GaAsBi approach reported by Bomberger et al is a noteworthy advance as these materials exhibited excellent dark resistivity and can be pumped with longer-wavelength sources, though more work is needed to achieve high carrier mobilities at the low growth temperatures that are required for dilute-bismide growth.…”