Characterization of Electron Traps in AuCd1−yZnyS Polycrystalline Schottky Diodes by Capacitance Transient Measurements

Abstract

A study of deep levels in the depletion region of AuCd1−yZnyS polycrystalline Schottky diodes is made using capacitance transient measurements in the composition range 0 < y < 0.10 with reference to the effect of change in composition on the deep level parameters. Three trap levels are observed with activation energies between 77 and 550 meV from the conduction band. The emission rate and capture cross section of the traps are presented.