Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots

Takami, Hitoshi; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

doi:10.7567/ssdm.2012.a-2-3

Cited by 1 publication

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“…Recently, Si quantum dots (Si QDs) embedded in an amorphous SiO 2 , SiN, or SiC host matrix have attracted much attention since they can emit intense luminescence both under optical and electronic excitation at room temperature [4]- [9]. It has been reported that the radiative recombination probability can be significantly enhanced in Si QDs compared with their bulk counterpart due to the enhanced overlapping of electron and hole wave functions in a confined system [10]- [13].…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

Cao

Lü

et al. 2014

IEEE Photonics J.

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We deposited a p-i-n structure device with alternative amorphous Si (a-Si) and amorphous SiC (a-SiC) multilayers as an intrinsic layer in a plasma-enhanced chemical vapor deposition (PECVD) system. A KrF pulsed excimer laser-induced crystallization of a-Si/a-SiC stacked structures was used to prepare Si quantum dots (Si QDs)/SiC multilayers. The formation of Si QDs with an average size of 4 nm was confirmed by Raman spectra, whereas the layered structures were revealed by cross-sectional transmission electron microscopy. Electroluminescence (EL) devices containing Si QDs/SiC multilayers embedded in a p-n junction were fabricated, and the device performance was studied and compared with the reference device without the p-i-n structure. It was found that the turn-on voltage was reduced and that luminescence efficiency was significantly enhanced by using the p-i-n device structure. The recombination mechanism of carriers in a Si-QD-based EL device was also discussed, and the improved device performance can be attributed to the enhanced radiative recombination probability in a p-i-n EL device.

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Section: Introductionmentioning

confidence: 99%