Characterization of Disorder in Semiconductors via Single-Photon Interferometry

Bozsoki, P.; Thomas, P.; Kira, M.; Hoyer, W.; Meier, Torsten; Koch, S. W.; Maschke, K.; Varga, Imre; Stolz, H.

doi:10.1103/physrevlett.97.227402

Cited by 6 publications

(11 citation statements)

References 22 publications

(42 reference statements)

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“…7,8 The relationship between localized structural disorder and optoelectronic modification is critical in understanding the behavior of materials that necessarily have some amount of disorder, e.g., devices operating in a radiative environment, or a nanoscale structure where a single defect might dominate the device properties. 11,12 As pointed out by Bozsok, 9 while high-resolution microscopy can probe atomicscale structural disorder, this relationship between structural disorder and optical modification is still not well established. Here, we use coherent acoustic phonon (CAP) spectroscopy to measure optical modification caused by ion bombardment in GaAs wafers.…”

mentioning

confidence: 98%

“…5,6 Local structural modification surrounding a given defect site also modifies the lattice potential. [7][8][9][10] Neighboring atomic potentials experience strain-induced perturbations resulting in variations from the Bloch-like electronic wave functions that characterize an ideal periodic crystal, leading to nanoscale "pockets" of modified optoelectronic properties. The length scale over which such disorder will modify optoelectronic properties is generally not well-characterized and will vary for different material systems, although experiments in quantum wells have shown that the disorder potential can reach at least tens of nanometers.…”

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confidence: 99%

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Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Steigerwald¹,

Hmelo²,

Varga³

et al. 2012

Journal of Applied Physics

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We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne++ for doses between 1011–1013 cm−2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion channeling analysis. Crystal damage is observed to cause optical modification that reduces the amplitude of the optoacoustic signal. The depth-dependent nature of the optoacoustic measurement allows us to determine optical damage cross-sections along the ion track, which are found to vary as a function of position along the track. Unexpectedly, we find that this optical modification is primarily dependent on the structural damage density and insensitive to the specific defect configuration along the ion track, suggesting that a simple model of defect density along the track is sufficient to characterize the observed optical changes. The extent of optical modification is strongly probe frequency-dependent as the frequency is detuned from the GaAs band edge. As determined from the experimental measurements, the spatial extent of optical modification exceeds the spatial extent of the structural disorder by an order of magnitude.

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confidence: 98%

mentioning

confidence: 99%

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Steigerwald¹,

Hmelo²,

Varga³

et al. 2012

Journal of Applied Physics

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“…This technique has achieved a great success in numerous applications in semiconductor optics for systems with strong many-body correlations [4,5]. Our experience shows that the interplay of disorder and interaction does yield novel and interesting phenomena [6,7]. Here we provide one more evidence that it can also be used to tackle challenging problems in the field of interacting disordered systems.…”

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confidence: 85%

Electron‐electron relaxation in disordered interacting systems

Bozsoki

Varga

Schomerus

2008

Phys. Status Solidi (c)

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We study the relaxation of a non‐equilibrium carrier distribution under the influence of the electron‐electron interaction in the presence of disorder. Based on the Anderson model, our Hamiltonian is composed from a single particle part including the disorder and a two‐particle part accounting for the Coulomb interaction. We apply the equation‐of‐motion approach for the density matrix, which provides a fully microscopic description of the relaxation. Our results show that the nonequilibrium distribution in this closed and internally interacting system relaxes exponentially fast during the initial dynamics. This fast relaxation can be described by a phenomenological damping rate. The total single particle energy decreases in the redistribution process, keeping the total energy of the system fixed. It turns out that the relaxation rate decreases with increasing disorder. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Here, E 1 and E 2 are the limits of the energy scan carried out in the experiment. U (x) is called the reconstructed disorder potential [11].…”

Section: A Reconstruction Proceduresmentioning

confidence: 99%

“…In order to enhance our understanding of the role of disorder in these systems, we have recently proposed an experimental scheme [11] which can be viewed as the Fourier analogue of nano-or microluminescence [12,13,14,15]. This scheme is based on measuring angular correlations of spontaneously emitted light and has been shown to give direct access to the spatial distribution of the optically active electronic states and to the effect of disorder on them.…”

Section: Introductionmentioning

confidence: 99%

Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures

Bozsoki

Hoyer

Kira

et al. 2007

J Mater Sci: Mater Electron

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In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), arXiv:cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light.In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.

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Characterization of Disorder in Semiconductors via Single-Photon Interferometry

Cited by 6 publications

References 22 publications

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Electron‐electron relaxation in disordered interacting systems

Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures

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