Characterization of dielectric layers grown at low temperature by atomic layer deposition

Gierałtowska, S.; Wachnicki, Ł.; Witkowski, B.S.; Mroczynski, Robert; Dłuźewski, P.; Godlewski, M.

doi:10.1016/j.tsf.2015.01.059

Cited by 37 publications

(54 citation statements)

References 28 publications

(55 reference statements)

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“…60,180,181 For the latter, we note that in some cases the degree of crystallinity in ALD HfO 2 has been observed to increase with thickness/number of growth cycles, 18,30,56 and that other tetragonal and orthorhombic crystalline phases have been reported. 180,181 Post-deposition annealing at 500-900…”

Section: N194mentioning

confidence: 76%

“…This is consistent with several other XRD and transmission electron microscope (TEM) investigations of ALD and PEALD Al 2 O 3 where amorphous films have been routinely reported. 18,66,164 In contrast, prior investigations of PEALD AlN have reported the growth of both amorphous 157,158 and poly-crystalline 161,179 films. In this regard, we note that the stoichiometry for previously studied amorphous PEALD AlN films has been reported to be nitrogen-rich, 157,158 which is consistent with our observations.…”

Section: Elemental Composition-mentioning

confidence: 88%

“…Electrical and optical properties.- Table II 18,190,191 AlN (RI = 1.8-2.2, k = 5.7-9.5), 84,86,88,[97][98][99][100][101] and BeO films (RI = 1.67-1.72, k = 6.5-6.8). 184,192 Relative to SiO 2 , all the investigated dielectrics have substantially higher values of RI and k. Relative to SiN:H, however, only HfO 2 has a significantly higher RI and k.…”

mentioning

confidence: 99%

“…18,159,184,190 However, the field dependence of the leakage current and breakdown characteristics differed amongst the materials. Specifically, AlN, BeO, and SiN:H exhibited a near continuous increase in electrical leakage up to the compliance current set for the IV measurements (10 -4 A).…”

mentioning

confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: N194mentioning

confidence: 76%

Section: Elemental Composition-mentioning

confidence: 88%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Atomic layer deposition (ALD) of metal oxides is most commonly based on sequential surface reactions between metal and oxygen precursors, therewith in the case of ZrO 2 between, e.g., Zr[N(CH 3 )(C 2 H 5 )] 4 and H 2 O [12] or Zr[(CH 3 ) 2 N] 4 and H 2 O [20]. Often, both precursors contain hydrogen and thus the residual hydrogen content could be diminished after substituting either one or both precursors by hydrogen-free ones.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

et al. 2015

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Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells

Szymon,

Zielony,

Sobanska

et al. 2024

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Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for innovation in high‐frequency opto‐ and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties. First, the crystal lattice relaxation is observed by X‐ray diffraction, photoluminescence, and Raman spectroscopy measurements. A high potential of partial coverage for optoelectronic applications is revealed with photo‐ and cathodoluminescence spectra along with an exploration of their temperature dependency. Next, the study focuses on understanding the mechanisms behind the observed enhancement of the luminescence efficiency. It is confirmed that nanowires are effectively protected against photoadsorption using partial coatings. This research advances the frontiers of nanotechnology, investigating the benefits of partial coverage, and shedding light on its complex interaction with cores.

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Characterization of dielectric layers grown at low temperature by atomic layer deposition

Cited by 37 publications

References 28 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells

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