Characterization of Dielectric Etching Processes by X-Ray Photoelectron Spectroscopy Analyses in High Aspect Ratio Contact Holes

Abstract

A description of heavy-ion resonances in terms of the Morse and anharmonic oscillator potentials is presented for a complete and updated compilation of resonances in the 12C + l 6 0 and l 6 0 + I6O systems. In both cases the calculated curves fit the experimental data very well. Effective Morse-potential curves are calculated from the fitting parameters. The effect of higher-frequency vibration values on the fit to the resonance data and the calculated bonding potential of the l6O + l6O system are also studied.

Etching of porous SiOCH materials in fluorocarbon-based plasmas

“…24 The situation is different here since the etch stop phenomena are observed even on blanket porous material surfaces. 24 The situation is different here since the etch stop phenomena are observed even on blanket porous material surfaces.…”

Dependence of etch rates of silicon substrates on the use of C4F8 and C4F6 plasmas in the deposition step of the Bosch process

“…[8][9][10] This has become a serious issue for the semiconductor industry because PFCs are used extensively as etchants for silicon and silicon dioxide. [11][12][13][14] In order to reduce PFC emissions, many studies have been carried out to identify environmentally benign alternatives to PFCs, including unsaturated fluorocarbons ͑UFCs͒, such as hexafluoropropene ͑C 3 F 6 , CF 2 v CF-CF 3 ͒, hexafluoro-1,3-butadiene ͑C 4 F 6 , CF 2 v CF-CFv CF 2 ͒, octafluorocyclopentene ͑C 5 F 8 ͒, etc., as well as to determine their etching characteristics. [15][16][17] Although there have been many studies of compounds with alternative chemistry to PFCs for potential applications in the fabrication of microelectronics devices, there are few reports on the use of alternative materials in the Bosch process.…”

Comparison of deep silicon etching using SF6/C4F8 and SF6/C4F6 plasmas in the Bosch process

“…[9][10][11] Originally, PFCs have been extensively used as etchants for silicon and silicon dioxide in microelectronics industries. [12][13][14][15][16] Due to the Kyoto protocol, the PFC emission reduction is much more strongly required. This forces the microelectronics industries to investigate environmentally benign chemistries as alternatives to PFCs including unsaturated fluorocarbons ͑UFCs͒ such as hexafluoropropene ͑C 3 F 6 , CF 2 = CF-CF 3 ͒, hexafluoro-1,3-butadiene ͑C 4 F 6 , CF 2 = CF-CF= CF 2 ͒, octafluorocyclopentene ͑C 5 F 8 ͒, etc., and study their etch characteristics.…”