2013
DOI: 10.1117/12.2031066
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Characterization of Diamond-like Carbon (DLC) films deposited by RF ICP PECVD method

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Cited by 5 publications
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“…The investigated DLC films were deposited by RF ICP PECVD method on silicon substrates [11,12]. The films were deposited on polished and textured 10 mm × 10 mm square silicon substrates located on 2" silicon transport plate.…”
Section: Methodsmentioning
confidence: 99%
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“…The investigated DLC films were deposited by RF ICP PECVD method on silicon substrates [11,12]. The films were deposited on polished and textured 10 mm × 10 mm square silicon substrates located on 2" silicon transport plate.…”
Section: Methodsmentioning
confidence: 99%
“…The DLC films with different bonding configurations (sp 3 around 35 %, 50 % and 70 %) were deposited on polished and textured substrates. The sp 3 fraction content of the DLC films was controlled by the power value of the applied RF signal [11,12]. Before the deposition process, the silicon substrates were cleaned by ion bombardment in argon plasma discharge in order to improve the adhesion of the DLC film to the substrate.…”
Section: Methodsmentioning
confidence: 99%
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“…Одним из надежных методов получения однородных и морфологически гладких DLC-покрытий является метод PECVD (plasma-enhanced chemical vapor deposition) [11,12]. Его улучшенный вариантосаждение в плазме индуктивно-связанного разряда (ICPCVD, inductively coupled plasma chemical vapor deposition) [13][14][15]. В ICPCVD благодаря плотной плазме (∼ 10 13 реакционных частиц в 1 см 3 ) удается поддерживать высокую скорость процесса при пониженных температурах без увеличения емкостной мощности.…”
Section: Introductionunclassified