Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy

Kalboussi, Adel; Marrakchi, G.; Guillot, G.; Kainosho, K.; Oda, Osamu

doi:10.1063/1.108134

Cited by 21 publications

(15 citation statements)

References 11 publications

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“…We have also reported it in thermally annealed Fe-doped SI InP, and in rapid thermal annealed Fe-doped SI InP. 15,16 Hirt et al have observed, by DLTS, in annealed but still conducting undoped InP, an electron trap having the same activation energy ͑0.4 eV͒ whose concentration increases with phosphorus pressure. 8,10 They as well observe in both undoped and Fe-doped annealed SI InP the same level by TSC.…”

Section: Resultssupporting

confidence: 53%

“…15 However, it does not appear in thermally annealed Fe-doped SI InP, at 663-820°C temperature for 15 min. 16 Apparently, according to the results obtained in our PICTS studies, two conditions must be satisfied to have A2: presence of iron and annealing under high phosphorus pressure. Hirt et al 10 have observed by TSC a level named T1, having an activation energy of 0.315 eV, for high temperature annealed InP.…”

Section: Resultsmentioning

confidence: 87%

“…Hirt et al 10 identified a corresponding level in the annealed material as an acceptorlike electron trap and reported a significant correlation of its concentration with phosphorus pressure. On the opposite, Kalboussi et al 16 discussed the possibility that the 0.4 eV trap is somehow related to a phosphorus vacancy, following previously reported literature data.…”

Section: Resultsmentioning

confidence: 87%

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Traps in undoped semi-insulating InP obtained by high temperature annealing

Marrakchi

Cherkaoui

Karoui

et al. 1996

Journal of Applied Physics

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The presence and evolution of traps in undoped semi-insulating ͑SI͒ InP obtained by high temperature annealing ͑900°C for 90 h͒ in poor or rich phosphorus atmosphere has been studied by means of photoinduced current transient spectroscopy. Six traps named A1 to A6 having activation energies ranging from 0.2 to 0.6 eV have been detected in three samples submitted to the same annealing process. The samples differ in the Fe concentration of the starting material and the applied phosphorus pressure in the annealing process. A comparison of the corresponding photoinduced current transient spectroscopy spectra shows that among the observed traps, the 0.2 eV one can be related to a phosphorus deficiency, and the 0.3 eV and 0.4 eV traps could be due to an excess of phosphorus during annealing. Moreover, the trap corresponding to iron ͑0.6 eV͒ has been observed in all the studied samples.

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Section: Resultssupporting

confidence: 53%

Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 87%

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Traps in undoped semi-insulating InP obtained by high temperature annealing

Marrakchi

Cherkaoui

Karoui

et al. 1996

Journal of Applied Physics

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“…Further annealing of this sample at 700°C for 12 hours causes the 0.65eV peak intensit\( to become stronger than that at 0.66eV and the resistivity decreases to 8.5x104R.cm . The dccrcasc of resistivity of annealed Fe-doped InP is caused by the increase of shallow intrinsic defect conccntration [11,12]. It is interesting that the SI property of this sample is recovered after it is annealed at 800°C and 900°C for about 50 hours.…”

Section: Resultsmentioning

confidence: 99%

Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Zhao¹,

Fung²,

Beling³

et al. 1998

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)

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“…However, the reproducibility was very poor, which has been associated with the lack of control over the iron concentration and the competition with other contaminants coming from the red phosphorous sources [ 181. Anyway, it is admitted that in the absence of a native deep level, as EL2 in GaAs [19], a minimum iron concentration is required to obtain semi-insulating substrates; below such a concentration, contaminants play an important role in the Compensation [18,20].…”

Section: B Thermal Treatments and Electrical Compensationmentioning
confidence: 99%

Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing
Jiménez¹,
Avella²,
Puente³
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SI
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Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation. A. IntroductionSemi-insulating InP is a basic material for high speed electronics and OEIC's (Optoelectronic Integrated Circuits) for fibre optic communication systems. The growth and preparation of substrates with precise requirements is a crucial step in the development of these technologies. Among the major requirements of these substrates are high resistivity, high mobility and whole wafer uniform properties [l]. Commercially available LEC (Liquid Encapsulated Czochralski) substrates are prepared by adding iron to the polycrystalline charge [1,2]. Iron enters the In site in the InP lattice giving a midgap acceptor (Ea=0.64 ev) [3], that compensates the residual shallow donors. However, the presence of iron raises several challenging problems. These problems are normally related to its small distribution coefficient (< 0.001) [l], its high diffusivity [4] and its incomplete electrical activation [1,4]. The consequence of the low segregation coefficient is a pronounced axial distribution profile [5]. The low electrical activation demands that high amounts of iron be added to the charge, above that strictly necessary for compensating the shallow donors. The high diffusivity together with the high doping amounts are responsible for the iron contamination of the epilayers grown on these substrates [6], which is detrimental for the device performance.From the point of view of the radial uniformity the problems are not smaller, since typical macroscopic and microscopic lateral fluctuations appear. Doping growth striations are commonly observed [7,8]. These inhomogeneities arise from non convective transport in the melt, the curvature of the growth interfaces and other growth features.In addition to these macroscopic and mesoscopic non uniformities, a number of microdefects are present, e.g. grown-in dislocations, microprecipitates and grain boundaries [9]. These microdefects play an important role in the properties of the substrates and in the thermal treatments as we will see later [lo-121. Following these considerations, a great effort is necessary in order to improve the quality of the wafers actually available. As it was shown for other substrates, e.g.GaAs [13], adequate thermal treatments seem to be the best way for achieving advances in the optimization of the semi-insulating InP substrates. Strong research has been carried out in the last years about thermal treatments to obtain high quality semi-insulating InF' substrates. In spite of this, there is ...

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Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy

Abstract: Articles you may be interested in Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing

Cited by 21 publications

References 11 publications

Traps in undoped semi-insulating InP obtained by high temperature annealing

Traps in undoped semi-insulating InP obtained by high temperature annealing

Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing

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