2014
DOI: 10.1016/j.tsf.2013.11.037
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Characterization of CuS nanocrystalline thin films synthesized by chemical bath deposition and dip coating techniques

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Cited by 119 publications
(55 citation statements)
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“…Maximal widening (0.19 eV) is achieved as Sm content equals 0.75 at.%. This widening is larger than the reported 0.018 eV and 0.04 eV resulted from Al doping of 2-3 at.% [20,21] and near 0.21 eV due to Er dopings of 0.6 at.% [19]. The band gap widening with respect to the pure ZnO film may be the well-known Moss-Burstein shift [13][14][15][16]19].…”
Section: Resultsmentioning
confidence: 63%
“…Maximal widening (0.19 eV) is achieved as Sm content equals 0.75 at.%. This widening is larger than the reported 0.018 eV and 0.04 eV resulted from Al doping of 2-3 at.% [20,21] and near 0.21 eV due to Er dopings of 0.6 at.% [19]. The band gap widening with respect to the pure ZnO film may be the well-known Moss-Burstein shift [13][14][15][16]19].…”
Section: Resultsmentioning
confidence: 63%
“…The absorbance decreases with the increase in deposition time period of the films, which leads to increase in the thickness of deposited films. The decrease in absorption with thickness can be explained in another way, where in this case of a thicker films, more atoms are present in the films so more states will be available for the photons to be absorbed [9][10][11]. When the deposition time period increases absorbance found to be decreased.…”
Section: IImentioning
confidence: 99%
“…CuS thin films have been prepared by various techniques including electro deposition [3], successive ionic layer adsorption and reaction (SILAR) [4,5], spray pyrolysis [6], photochemical deposition [7] and chemical bath deposition (CBD) [8][9][10]. Among these techniques CBD is a promising technique because it is simple, safe, has low deposition temperature, inexpensive and environmental friendly method.…”
Section: Introductionmentioning
confidence: 99%