Characterization of CuIn1−xAlxS2 thin films prepared by thermal evaporation

Smaïli, F.; Kanzari, M.; Rezig, B.

doi:10.1016/j.msec.2007.10.033

Cited by 20 publications

(4 citation statements)

References 14 publications

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“…There are numerous factors affecting the value of band gap, such as crystallinity (crystallite size) [25], impurities [1,26], native defect states [27,28], and phase purity [29,30]. The present results show that addition of the complexing agents influences oxygen content, phase purity, and crystallinity of the films.…”

Section: Discussionmentioning

confidence: 51%

Effects of complexing Agents on three Steps pulse Electrodeposited SnS thin films

Supee

Tanaka

Ichimura

2015

Materials Science in Semiconductor Processing

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Section: Discussionmentioning

confidence: 51%

Effects of complexing Agents on three Steps pulse Electrodeposited SnS thin films

Supee

Tanaka

Ichimura

2015

Materials Science in Semiconductor Processing

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“…As shown in Table 3 above, the calculated anisotropy shear factor value indicates a strongly anisotropic characteristic of this system. 𝐴 = 2𝐶 44 𝐶 11 − 𝐶 12 (10) In addition, two-dimensional Young's modulus (E), linear compressibility (𝛽), shear modulus (G) and Poisson's ratio (σ) were plotted for the related cubic system, as can be seen in Figure 4, in order to better explain the isotropicity. According to these figures, it can be said that this material has anisotropic nature except linear compressibility (𝛽).…”

Section: The Mechanical Characteristics Of Cuga5s8mentioning

confidence: 99%

“…Therefore, the intriguing physical properties of these type materials are need to be focused on. Although in literature, there were some reports about selenides and sulfides [4][5][6][7][8][9][10][11][12][13], up to now, the electronic nature and mechanical characteristic of CuGa5S8, which has a spinel-like structure and crystallizes in the face centered cubic with 𝐹4 ̅ 3𝑚 space group and 216 space number, have not yet been studied in detail. So, we focused on electronic behavior and some elasticity properties of the CuGa5S8 system by use of the ab initio simulation methods.…”

Section: Introductionmentioning

confidence: 99%

CuGa5S8’in Elektronik Davranışı ve Mekaniksel Karakteri

Erkisi

Özcan

2022

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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In this theoretical study, it is presented that the electronic behavior and mechanical characteristics of CuGa5S8 compound having face centered cubic structure with space group F4 ̅3m and space number 216. All calculations based on density functional theory (DFT) were performed by Generalized Gradient Approximation (GGA). It is understood from the observed electronic band structure of this system that it has semiconducting behavior close to zero-band gap. Also, the high similarity between spin-up and spin-down states indicates that the magnetic nature of this compound may be paramagnetic. Furthermore, the elastic constants were calculated by the stress-strain method, and then, the mechanical stability of this system was determined. Finally, these constants were used to predict some important mechanical properties of the mentioned system.

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“…It is possible to adjust the band gap values by scanning CuIn1-xGaxSe2 compound as a function of x in the range of 0-1 (Fan et al 1982). The quaternary CIGS compound materials have been grown on various substrates by different methods such as electron beam evaporation (e-beam evaporation) (Venkatachalam et al 2008;Ramanathan et al 2005;Li et al 2011), reactive magnetron sputtering (Gillespie et al 1997), thermal evaporation (Klenk et al 2002;F. Smaïli et al 2008), thermal co-evaporation (Niemi et al 1996;Basol et al 2000;Kushiya et al 1995), flash evaporation (Ahmed et al 1998), pulsed laser deposition (PLD) (Levoska et al 1994;Matsubara et al 2003) and physical vapor transport (Bhattacharya et al 1999).…”

Section: Introductionmentioning

confidence: 99%

CuInSe2 ve CuGaSe2 İnce Filmlerin Özellikleri Üzerine Karşılaştırmalı Çalışma

Candan

Güllü

2019

European Journal of Science and Technology

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Two edge of Cu(In1-xGax)Se2 (CIGS) thin film semiconductors for x=0 (CuInSe2) and x=1 (CuGaSe2) have been produced onto the soda lime glass substrates at 250 o C by sputtering from Cu, InSe and GaSe targets. The effects of In and Ga ratio and the postannealing at 350 o C and 400 o C on the properties of CuInSe2 (CIS) and CuGaSe2 (CGS) thin film samples have been investigated. The structural properties of the deposited films have been examined by using X-ray diffraction (XRD) and the compositions of samples were analyzed by performing energy dispersive X-ray diffraction analysis (EDXA) techniques. Raman spectra of thin film samples were studied at room temperature to determine the Raman active modes. The most intensive line (A1 modes) at 178 cm-1 and 185 cm-1 were observed for CIS and CGS thin films annealed at 400 o C, respectively. This is the most active mode detected in the Raman spectra of this type of chalcopyrite structures. For as-grown and annealed CGS thin films at 350 o C , the line 486 cm-1 was observed however intensity of this line decreased with increasing annealing temperature and totally disappeared after annealing at 400 o C. Optic transmission measurements showed that the deposited CIS and CGS thin films have optic band gap values for as grown and annealed (at 400 o C) samples changing from 1.28 eV to 1.45 eV and from 1.68 eV to 1.75 eV respectively. The room temperature electrical conductivities of the samples were measured as 8.6x10-3 and 13.6x10-2 (Ω.cm)-1 for n-type CIS thin film samples; 1.6 and 1.9 (Ω.cm)-1 for p-type CGS thin film samples before and after annealing at 400 o C, respectively.

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Characterization of CuIn1−xAlxS2 thin films prepared by thermal evaporation

Cited by 20 publications

References 14 publications

Effects of complexing Agents on three Steps pulse Electrodeposited SnS thin films

Effects of complexing Agents on three Steps pulse Electrodeposited SnS thin films

CuGa5S8’in Elektronik Davranışı ve Mekaniksel Karakteri

CuInSe2 ve CuGaSe2 İnce Filmlerin Özellikleri Üzerine Karşılaştırmalı Çalışma

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