Characterization of CuIn(Ga)Se2 Thin Films

Wagner, M.; Dirnstorfer, I.; Hofmann, Detlev M.; Lampert, M.; Karg, F.; Meyer, B. K.

doi:10.1002/(sici)1521-396x(199805)167:1<131::aid-pssa131>3.0.co;2-f

Cited by 48 publications

(20 citation statements)

References 20 publications

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“…The figure shows the spectra obtained from epitaxial films grown by MOVPE (metallorganic vapor phase epitaxy) on GaAs. The compositional dependence of the near-band-edge luminescence of polycrystalline films on Mo-covered glass shows exactly the same trends [11,[16][17][18].…”

Section: A Two Acceptors and A Donorsupporting

confidence: 57%

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Spindler

Babbe

Wolter

et al. 2019

Phys. Rev. Materials

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The electronic defects in any semiconductor play a decisive role for the usability of this material in an optoelectronic device. Electronic defects determine the doping level as well as the recombination centers of a solar cell absorber. Cu(In, Ga)Se 2 is used in thin-film solar cells with high and stable efficiencies. The electronic defects in this class of materials have been studied experimentally by photoluminescence, admittance, and photocurrent spectroscopies for many decades now. The literature results are summarized and compared to new results by photoluminescence of deep defects. These observations are related to other experimental methods that investigate the physicochemical structure of defects. To finally assign the electronic defect signatures to actual physicochemical defects, a comparison with theoretical predictions is necessary. In recent years the accuracy of these calculations has greatly improved by the use of hybrid functionals. A comprehensive model of the electronic defects in Cu(In, Ga)Se 2 is proposed based on experiments and theory. The consequences for solar cell efficiency are discussed.

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Section: A Two Acceptors and A Donorsupporting

confidence: 57%

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Spindler

Babbe

Wolter

et al. 2019

Phys. Rev. Materials

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“…Such a small value of jshift with laser excitation intensity is characteristic of donor-to-acceptor pair (DAP) recombination mechanism. [4] The DAP peak at ~0.89 eV has also been reported by Dagan et al and Niki et al, respectively, in single crystal CIS for Cu/In = 0.85 and in CIS film for Cu/In = 0.81. [11,19] PL spectra of CuInSe 2 film with Cu/In = 0.80 at various temperatures were presented in figure 5a.…”

Section: Resultssupporting

confidence: 73%

“…Chalcopyrite-structured copper indium diselenide (CuInSe 2 , CIS) thin films have been widely used as absorber layers in thin film solar cells because of large absorption coefficient and controllable p-type conduction. [1][2][3][4] The CIS or CIGS absorber layers used in CIS or CIGS (copper indium gallium diselenide) solar cells are usually Cu-poor. Lower interfacial recombination sites in Cu-poor CIS or CIGS is the reason behind better performance of the CIS or CIGS solar cells in terms of power conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

et al. 2018

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Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

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“…Furthermore, the high nonradiative recombination rates often require measurements to be performed at cryogenic temperatures. In spite of it all, various photoluminescence studies have contributed to unveil the nature of radiative recombinations in TF PV materials [75][76][77][78].…”

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

Laser applications in thin-film photovoltaics

et al. 2010

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We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se 2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laserbased fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH 4 ), silane radicals (SiH 3 , SiH 2 , SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

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Characterization of CuIn(Ga)Se2 Thin Films

Cited by 48 publications

References 20 publications

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

Laser applications in thin-film photovoltaics

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