Abstract:Photoluminescence (PL), PL intensity mapping and time-resolved PL (TR-PL) studies have been applied to the Cu(In,Ga)Se 2 (CIGS) solar cell fabrication process. Measurements have been done just after the respective cell process for the preparation of the Al/ZnO:Al/ZnO/CdS/CIGS structure, in which CdS has been formed by the chemical-bath deposition (CBD) while undoped and Al-doped ZnO layers were deposited by RF magnetron sputtering. PL intensity does not change by depositions of CdS and undoped ZnO buffer layer… Show more
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