2019
DOI: 10.36478/jeasci.2019.9449.9454
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Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell

Abstract: The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG 1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G 5 mbar, with area of 1 cm 2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation o… Show more

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