Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Melt-grown large-sized Cs2TeI6 crystals for X-ray detection

“…A quite low dark current of ~12 pA at 50 V was beneficial for obtaining high signal-to-noise ratio. The resistivity of Cs2TeI6 was calculated to be as high as 9.92×10 11 Ω•cm, which is 1~3 orders of magnitude higher than CdZnTe [32] , CsPbBr3 [17] and MAPbBr3 [33] , etc. The high resistivity of Cs2TeI6 was mainly ascribed to its special electronic structure and low vacancy due to the high formation energy of iodine vacancies, which reduced the shallow-level defects that can provide free charge carries [25] .…”

Formation and characterization of a CuPt-A type ordered structure in cadmium zinc telluride single crystals

“…Cd 0.9 Zn 0.1 Te (CZT) single crystals were grown through the modified vertical Bridgman method by using high purity elements (7-N purity) of Cd, Zn and Te as the starting materials. 38 After the crystal growth process, the following in situ annealing was carried out at 850 °C to homogenize the ingot and relieve the stress. The obtained ingot was sectioned along the axial direction to small disks with a dimension of 2 cm × 2 cm × 1 mm.…”

Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy

“…Detector‐grade Cd 0.9 Zn 0.1 Te crystals were grown by modified vertical Bridgman method (MVB) in our laboratory . Single crystal wafers were mechanically polished and chemical‐mechanically polished, consecutively, prior to measurement.…”