2000
DOI: 10.1016/s0022-0248(00)00291-8
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Characterization of CdS thin film in high efficient CdS/CdTe solar cells

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Cited by 47 publications
(37 citation statements)
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“…Due to solar cell stability-related issues, qualitative SIMS analysis was mainly dedicated to Cu and/or Cl diffusion into the cell structure for cells back-contacted with Cu-containing material [5][6][7]. It was also used to determine residual Cl concentration in CdTe following a wet CdCl 2 treatment [8] and to investigate the CdS/SnO 2 interface in solar cells [9]. Furthermore, qualitative SIMS was used for studying the effect, on the efficiency of the solar cells, of the etching procedure [10,11] and different materials used as electrodes on the CdTe surface [12].…”
Section: Introductionmentioning
confidence: 99%
“…Due to solar cell stability-related issues, qualitative SIMS analysis was mainly dedicated to Cu and/or Cl diffusion into the cell structure for cells back-contacted with Cu-containing material [5][6][7]. It was also used to determine residual Cl concentration in CdTe following a wet CdCl 2 treatment [8] and to investigate the CdS/SnO 2 interface in solar cells [9]. Furthermore, qualitative SIMS was used for studying the effect, on the efficiency of the solar cells, of the etching procedure [10,11] and different materials used as electrodes on the CdTe surface [12].…”
Section: Introductionmentioning
confidence: 99%
“…Even in the undoped CdS layer, Sn and Cl have atomic concentrations of 2 ϫ 10 17 and 4 ϫ 10 17 atoms/ cm 3 , respectively. The relatively high Sn concentration found in the undoped sample could be caused by the thermal diffusion of the Sn elements in the ITO substrate, 29 while the Cl contamination could be attributed to the Cl impurities also present in the ITO/glass substrate 29 and/or those in propylene glycol. On the other hand, the atomic concentrations of Sn and Cl in the DMTC-doped CdS film are 6 ϫ 10 17 and 4.5 ϫ 10 18 atoms/ cm 3 , respectively, and they are larger than those in the undoped CdS film.…”
Section: Methodsmentioning
confidence: 99%
“…CdS is an n-type semiconductor which has direct band gap (E g = 2.42 eV) and optical absorption suitable for photovoltaic applications as window coatings in many types of solar cells with absorber materials such as Cu(In, Ga)Se 2 [7], CdTe [8,9] or CuInSe 2 [10,11]. Furthermore, CdS nanocrystals are applied for lasers [12], biological labels [13,14], photoconducting cells in sensors [15] and photoelectrocatalysis devices [16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%