Characterization of burst noise in silicon devices

Hsu, Sheng Teng; Whittier, R.J.

doi:10.1016/0038-1101(69)90044-6

Search citation statements

Order By: Relevance

Paper Sections

Select...

Burst Noise1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1970

2011

Publication Types

Select...

Book4

Article2

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 32 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is believed that, the burst noise in forward junctions is due to the crystallographic defects present in the vicinity of the junction while in reversed junctions it is due to an irregular on-off switching of a surface conduction path as a result of random thermal fluctuations. Hsu and Whittier (Hsu & Whittier, 1969) dealt with an issue of determining whether the burst noise in forward junctions is a surface effect or volume effect. Extensive research has suggested that the burst noise in forward biased junctions is more a surface effect than a volume effect.…”

Section: Burst Noisementioning

confidence: 99%