2020
DOI: 10.1016/j.nima.2020.164124
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of boron-coated silicon sensors for thermal neutron detection

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 22 publications
0
5
0
Order By: Relevance
“…The ESS coating facility specialized in the coating of the 10 B 4 C converter layers on substrates made of Aluminium, but important expertise was gained in the past years with low-temperature Boron depositions [71] and on various substrate materials such as FR4, G10, Kapton, stainless steel, silicon or superconducting materials [13,54].…”
Section: The Ess Coating Facility For Thin 10 B 4 C Layersmentioning
confidence: 99%

10Boron-film-based gas detectors at ESS

Stefanescu,
Guérard,
Hall-Wilton
et al. 2024
JNR
Self Cite
“…The ESS coating facility specialized in the coating of the 10 B 4 C converter layers on substrates made of Aluminium, but important expertise was gained in the past years with low-temperature Boron depositions [71] and on various substrate materials such as FR4, G10, Kapton, stainless steel, silicon or superconducting materials [13,54].…”
Section: The Ess Coating Facility For Thin 10 B 4 C Layersmentioning
confidence: 99%

10Boron-film-based gas detectors at ESS

Stefanescu,
Guérard,
Hall-Wilton
et al. 2024
JNR
Self Cite
“…Respect to B 4 C films, B films are responsible for greater efficiency [20]. Due to the smaller number of useful 10 B nuclei per unit area, the carbon presence, whose stopping power is higher than boron's, reduces the angular range of the exiting particles.…”
Section: Perspectivesmentioning
confidence: 99%
“…Regarding the conversion element, it can be a component of the detector itself [10][11][12] or it can be introduced as a separate layer to be coupled with a detector [13][14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Semiconductor-based neutron detectors with lining or coating with neutron converter are also used. In this case, the charged particle emitted from the neutron absorber enters to the semiconductor device where further electron–hole pairs are generated and collected at the electrodes 37 , 38 . Doping these detectors with elements that could increase the neutron capture efficiency, for example 10 B enriched hBN neutron detectors 39 , should be the way for increasing the detection efficiency of semiconductor-based devices.…”
Section: Introductionmentioning
confidence: 99%