Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

Toyoda, Eiji; Sakai, Akira; Nakatsuka, Osamu; Isogai, Hiromichi; Senda, Takeshi; Izunome, Koji; Ogawa, Masahiro; Zaima, Shigeaki

doi:10.1016/j.tsf.2008.08.093

Cited by 11 publications

(16 citation statements)

References 5 publications

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“…These defects should be the core of the screw defects. The results obtained here support the experimentally determined Burgers vector of screw defects by Toyoda et al [2] mentioned above. Figure 4 shows the electron density distribution around V-and U-type domains, and coordinate defects.…”

Section: Calculation Detailssupporting

confidence: 92%

“…2 is also considered. [2,3] are also shown. Of course, the calculated and the experimental D y agree each other.…”

Section: Calculation Detailsmentioning

confidence: 98%

“…This enhanced performance 35% in the pFETs and no changes in the performance of nFETs when compared with devices fabricated on conventional Si (100) substrates. Toyoda et al [2,3] investigated the crystallinity of the DSB interface with transmission electron microscopy (TEM) observations and showed that (i) well-aligned screw defects along the <110> direction existed and (ii) that the Burgers vector of the screw defects is parallel to the <110> direction and is approximately half of that for perfect screw dislocation in Si with 110 2 a b = . Moreover, although <110> twist (misalignment) between Si (110) and (100) substrates is inevitable and incontrollable in the bonding process, results (i) and (ii) do not depend on the twist angle [3].…”

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confidence: 99%

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First‐principles calculation on screw defects at Si(110)/(100) interface

Kariyazaki

Aoki

Izunome³

et al. 2011

Phys. Status Solidi (c)

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Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation are promising for high‐performance bulk complementary metal‐oxide semiconductor technology. We have studied the interfacial structure of the Si (110)/(100) paralleling each 〈110〉 direction, including screw defects, by first‐principles calculation. The screw defects were characterized by analysing the atomic configuration and the chemical bonding. Furthermore, the periodicity of the screw defects is discussed in comparison the experimental results (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Calculation Detailssupporting

confidence: 92%

“…2 is also considered. [2,3] are also shown. Of course, the calculated and the experimental D y agree each other.…”

Section: Calculation Detailsmentioning

confidence: 98%

mentioning

confidence: 99%

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First‐principles calculation on screw defects at Si(110)/(100) interface

Kariyazaki

Aoki

Izunome³

et al. 2011

Phys. Status Solidi (c)

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“…Figure 5 shows the interfacial structure of ͑1, 1͒ model, which is the most stable, as shown in Table I. 2 In this TEM image, each white sphere corresponds to two Si atoms. In Table I, the interfacial structures of 15 models are also summarized.…”

Section: Resultsmentioning

confidence: 99%

Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates

Kariyazaki

Aoki

Izunome³

et al. 2010

Journal of Applied Physics

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An all-electron density functional theory study of the structure and properties of the neutral and singly charged M 12 and M 13 clusters: M = Sc-Zn Influence of 3d transition metals on the stability and electronic structure of MgH2 J. Appl. Phys. 111, 093720 (2012); 10.1063/1.4714549 When does the non-variational nature of second-order Møller-Plesset energies manifest itself? All-electron correlation energies for open-shell atoms from K to Br J. Chem. Phys. 136, 054107 (2012); 10.1063/1.3679969Atomic diffusion bonding of wafers with thin nanocrystalline metal films Direct silicon bonded ͑DSB͒ substrates with ͑110͒/͑100͒ hybrid orientation technology are attracting considerable attention as a promising technology for high performance bulk complementary metal-oxide semiconductor technology. We have investigated the structure and the gettering efficiency of the ͑110͒/͑100͒ interface parallelling each ͗110͘ direction ͑DSB interface͒ by molecular dynamics ͑MD͒ and first-principles calculation. In MD calculations, initial calculation cells of 15 atomic-configurations with coincidence-site lattices were prepared. It was found that ͑i͒ the calculated DSB interface was stable independent of the initial atomic-configurations and ͑ii͒ the interfacial structures were essentially the same among the calculated models. Moreover, the calculated interfacial structure corresponds to the reported TEM observation. The first-principles calculation showed that Si atoms in the DSB interface formed covalent bonding. The dangling bonds in Si ͑110͒ and ͑100͒ surfaces disappeared due to restructuring in the DSB interface. Furthermore, the DSB interface, which exists just below the device active region, was found to be an efficient gettering site for Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and Hf atoms.

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“…Using the orientation relation <110>{110} parallel to <110>{100}, only parallel arrangements of 60° dislocations are observed. Different results have been found by applying the orientation relation <100>{110} parallel to <110>{100} of analogous wafer pairs [46]. The defects obtained under these conditions are not clearly identified but it is expected that their Burgers vector is about one quarter of a screw dislocation.…”

Section: Two-dimensional Dislocation Networkmentioning

confidence: 94%

Electronic and Optical Properties of Dislocations in Silicon

Reiche

Kittler

2016

Crystals

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Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core-exceeding 10% or more-causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.

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Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

Cited by 11 publications

References 5 publications

First‐principles calculation on screw defects at Si(110)/(100) interface

First‐principles calculation on screw defects at Si(110)/(100) interface

Molecular simulation on interfacial structure and gettering efficiency of direct silicon bonded (110)/(100) substrates

Electronic and Optical Properties of Dislocations in Silicon

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