“…Although Bi 2 Se 3 is a semiconductive chalcogenide, a stable current density is confirmed in potentiostatic electrochemical deposition, demonstrating consistent film growth (Figure S2b). The polycrystalline Bi 2 Se 3 film exhibits conductive nature during electrodeposition, leading to stable film deposition. , The synthesized films on the indium tin-doped oxide (ITO) substrate reveal a mirror-like surface with compositional equivalence regardless of the presence or size of pores, suggesting uniform growth of Bi 2 Se 3 and smooth film surfaces (Figure d,e and Movie S1).…”
Bi2Se3 is a semiconductive material
possessing
a bandgap of 0.3 eV, and its unique band structure has paved the way
for diverse applications. Herein, we demonstrate a robust platform
for synthesizing mesoporous Bi2Se3 films with
uniform pore sizes via electrodeposition. Block copolymer micelles
act as soft templates in the electrolyte to create a 3D porous nanoarchitecture.
By controlling the length of the block copolymer, the pore size is
adjusted to 9 and 17 nm precisely. The nonporous Bi2Se3 film exhibits a tunneling current in a vertical direction
of 52.0 nA, but upon introducing porosity (9 nm pores), the tunneling
current increases significantly to 684.6 nA, suggesting that the conductivity
of Bi2Se3 films is dependent on the pore structure
and surface area. The abundant porous architecture exposes a larger
surface area of Bi2Se3 to the surrounding air
within the same volume, thereby augmenting its metallic properties.
“…Although Bi 2 Se 3 is a semiconductive chalcogenide, a stable current density is confirmed in potentiostatic electrochemical deposition, demonstrating consistent film growth (Figure S2b). The polycrystalline Bi 2 Se 3 film exhibits conductive nature during electrodeposition, leading to stable film deposition. , The synthesized films on the indium tin-doped oxide (ITO) substrate reveal a mirror-like surface with compositional equivalence regardless of the presence or size of pores, suggesting uniform growth of Bi 2 Se 3 and smooth film surfaces (Figure d,e and Movie S1).…”
Bi2Se3 is a semiconductive material
possessing
a bandgap of 0.3 eV, and its unique band structure has paved the way
for diverse applications. Herein, we demonstrate a robust platform
for synthesizing mesoporous Bi2Se3 films with
uniform pore sizes via electrodeposition. Block copolymer micelles
act as soft templates in the electrolyte to create a 3D porous nanoarchitecture.
By controlling the length of the block copolymer, the pore size is
adjusted to 9 and 17 nm precisely. The nonporous Bi2Se3 film exhibits a tunneling current in a vertical direction
of 52.0 nA, but upon introducing porosity (9 nm pores), the tunneling
current increases significantly to 684.6 nA, suggesting that the conductivity
of Bi2Se3 films is dependent on the pore structure
and surface area. The abundant porous architecture exposes a larger
surface area of Bi2Se3 to the surrounding air
within the same volume, thereby augmenting its metallic properties.
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