Characterization of As₂Se₃/MoO₃ heterojunction designed for multifunctional operations

Abstract

In this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10–5 mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm2 V−1 s−1. From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications.

Effects of polycrystalline GeO2 substrates on the structural, optical and electrical properties of ZnSe thin films

“…For this reason, reproducing the experimental data assuming a series RLC circuit in which and = C 1.0 pF for the Au/ZnSe/C and Au/GeO 2 /ZnSe/C devices, respectively. At these parameters, perfect match between the source and device can be achieved [46,47].…”