Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography

Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.

doi:10.1016/j.tsf.2009.08.020

Cited by 17 publications

(9 citation statements)

References 9 publications

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“…It was unclear, however, if the peak is attributed to O + , O 2 ++ , or their mixture. This problem has been solved by considering which could give an expected stoichiometry [13], and the peak has been typically attributed to O 2 ++ [5,14,15,16]. The former studies, however, have not discussed the variation of the elemental composition arising from possible peak assignments.…”

Section: Introductionmentioning

confidence: 99%

Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

Kinno

Tomita

Ohkubo

et al. 2014

Applied Surface Science

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18 O-enriched SiO 2 thin film with the 16 O: 18 O ratio of around 1:1 has been analyzed by laser-assisted atom probe tomography (LA-APT) using 343 nm-wavelength ultraviolet laser or 532 nm-wavelength green laser in order to investigate the quantitativeness of the oxygen concentration determined by LA-APT. No clear evidence for detecting 16 O 18 O ++ signals was found in mass spectra, implying that the peaks at mass/charge of 16 and 18 are dominated by O + , not by O 2 ++. The calculated elemental composition indicated significant loss of oxygen in LA-APT analysis of SiO 2 .

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Section: Introductionmentioning

confidence: 99%

Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

Kinno

Tomita

Ohkubo

et al. 2014

Applied Surface Science

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“…The impact of this artifact on APT microanalysis of grain boundaries, heterophase interfaces, and other structural features has not been adequately addressed. Examples where this artifact may impact the data can be found throughout the literature (Seidman et al, 1994; Blavette et al, 1996; Larson et al, 2004; Thuillier et al, 2006; Tamion et al, 2007; Pereloma et al, 2008; Sha et al, 2009; Lozano-Perez et al, 2010; Ngamo et al, 2010; Weidow & Andren, 2010). In the present article, we investigate the impact of solute retention on the in-depth spatial performance of atom probe microanalysis of grain boundaries within different engineering materials and propose a methodology to correct for this significant artifact.…”

Section: Introductionmentioning

confidence: 99%

A New Approach to the Determination of Concentration Profiles in Atom Probe Tomography

Felfer¹,

Gault²,

Sha³

et al. 2012

Microsc Microanal

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Atom probe tomography (APT) provides three-dimensional analytical imaging of materials with near-atomic resolution using pulsed field evaporation. The processes of field evaporation can cause atoms to be placed at positions in the APT reconstruction that can deviate slightly from their original site in the material. Here, we describe and model one such process--that of preferential retention of solute atoms in multicomponent systems. Based on relative field evaporation probabilities, we calculate the point spread function for the solute atom distribution in the "z," or in-depth direction, and use this to extract more accurate solute concentration profiles.

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“…As a first conclusion from these 3D elemental distributions, it can be observed that SiC/SiO 2 interfaces are less abrupt than what it has been reported e.g. for the Si/SiO 2 interface [12]. This roughness at the interface could explain the drastic fall of mobility in the SiC substrate of these MOSFETs compared to the SiC intrinsic bulk mobility [9].…”

Section: Resultsmentioning

confidence: 49%

“…Structural and compositional distributions across the interface were performed by coupling HRTEM and spatially resolved EELS. Beside, Atom Probe Tomography (APT), a technique enabling the characterization in 3D at the atomic scale [11,12] was used to give complementary information about these SiC/SiO 2 interfaces with atomic resolution.…”

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confidence: 99%

Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Beltrán

Duguay

Strenger

et al. 2015

Solid State Communications

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Abstract. The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO 2 interface and its relationship to their electrical properties.Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO 2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO 2 interface.

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Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography

Cited by 17 publications

References 9 publications

Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

Laser-assisted atom probe tomography of 18O-enriched oxide thin film for quantitative analysis of oxygen

A New Approach to the Determination of Concentration Profiles in Atom Probe Tomography

Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

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