Abstract:In this study, amorphous silicon and polycrystalline silicon films were implanted with arsenic and subjected to varied low temperature (<900°C) anneal conditions and characterized using TEM. The microstructure is of interest for later correlation with electrical measurements. The amorphous deposition produces larger, more irregular grains with more strain than does the polysilicon deposition for a single-step rapid thermal anneal (RTA) cycle. This can be explained by the number of critical nucleii and the r… Show more
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