Characterization of argon metastable species as function of time, space, and current of a pulsed dc glow discharge

Lotito, G.; Nelis, Thomas; Guillot, Philippe; Günther, Detlef

doi:10.1016/j.sab.2011.06.009

Cited by 17 publications

(12 citation statements)

References 21 publications

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“…Atomic oxygen radical has been recognized as the most reactive specie in oxygen plasma, and here optical emission spectroscopy (OES) was used for a diagnostic [23,24,25,26]. Figure 4 showed the OES spectra of O 2, O 2 /Ar and Ar plasma.…”

Section: Resultsmentioning

confidence: 99%

Plasma-Exposure-Induced Mobility Enhancement of LiTFSI-Doped Spiro-OMeTAD Hole Transport Layer in Perovskite Solar Cells and Its Impact on Device Performance

Zhao

Wang

et al. 2019

Materials

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2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD) film currently prevails as hole transport layer (HTL) employed in perovskite solar cells (PSCs). However, the standard preparation method for spin-coated, Lithium bis(trifluoromethylsulfony) imide (LiTFSI)-doped, spiro-OMeTAD HTL depends on a time-consuming and uncontrolled oxidation process to gain desirable electrical conductivity to favor device operation. Our previous work demonstrated that ~10 s oxygen or oxygen containing gas discharge plasma exposure can oxidize spiro-OMeTAD HTL effectively and make PSCs work well. In this communication, hole-only devices are fabricated and in-situ current density-voltage measurements are performed to investigate the change in hole mobility of LiTFSI-doped spiro-OMeTAD films under plasma exposure. The results reveal that hole mobility values can be increased averagely from ~5.0 × 10−5 cm2V−1s−1 to 7.89 × 10−4 cm2V−1s−1 with 7 s O2 plasma exposure, and 9.33 × 10−4 cm2V−1s−1 with 9 s O2/Ar plasma exposure. The effects on the photovoltaic performance of complete PSC devices are examined, and optical emission spectroscopy (OES) is used for a diagnostic to explain the different exposure effects of O2 and O2/Ar plasma. High efficiency, fine controllability and good compatibility with current plasma surface cleaning techniques may make this method an important step towards the future commercialization of photovoltaic technologies employing spiro-OMeTAD hole transport material.

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Section: Resultsmentioning

confidence: 99%

Plasma-Exposure-Induced Mobility Enhancement of LiTFSI-Doped Spiro-OMeTAD Hole Transport Layer in Perovskite Solar Cells and Its Impact on Device Performance

Zhao

Wang

et al. 2019

Materials

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“…In astrophysics [1][2][3], argon spectral lines are important in determining the chemical abundance of elements and estimating radiative transfer through stellar plasmas. Argon plasma sources are also applied in various fields of industry and research [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…The report by Hansen and Persson [9] that presented a revised and extended analysis of the optical spectrum of Ar III is noteworthy. They used hollow cathode and theta-pinch sources analyzing the 3s 2 3p 4 , 3s3p 5 , 3p 6 , 3s 2 3p 3 4s, 3s 2 3p 3 4p, and 3s 2 3p 3 3d configurations. Improved energy levels in this ion resulting from the best wavelengths in the literature in the range between 508 Å and 4183 Å were presented by Kaufman and Whaling [10].…”

Section: Introductionmentioning

confidence: 99%

Extended Analysis of Ar III and Ar IV

Raineri

Castellanos

Gallardo

et al. 2018

Atoms

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A pulsed discharge light source was used to study the two and three times ionized argon (Ar II, Ar III) spectra in the 480–6218 Å region. A set of 129 transitions of Ar III and 112 transitions of Ar IV were classified for the first time. We extended the analysis of Ar III to five new energy levels belonging to 3s23p34d, 3s23p35s odd configurations. For Ar IV, 10 new energy levels of the 3s23p23d and 3s23p24p even and odd configurations, respectively, are presented. For the prediction of energy levels, line transitions, and transition probabilities, relativistic Hartree–Fock calculations were used.

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“…The argon spectral lines are important in determining chemical abundances of elements and for estimation of the radiative transfer through stellar plasmas [7]. Argon plasma sources are required in various fields [8][9][10][11]. For this reason, the data on the transition parameters in multiply ionized argon ions is important for argon plasma modeling and laser physics [12,13].…”

Section: Introductionmentioning

confidence: 99%