Characterization of amorphous zinc tin oxide semiconductors

Rajachidambaram, Jaana S.; Sanghavi, Shail; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamás; Flynn, Brendan; Thevuthasan, Suntharampillai; Herman, Gregory S.

doi:10.1557/jmr.2012.170

Cited by 31 publications

(28 citation statements)

References 47 publications

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“…5 In perovskite ZnSnO 3 crystals, each Zn and Sn octahedrons share corners with another Zn and Sn octahedron structure 2 and during crystallization through solid-state reactions, transforms from its metastable form to thermodynamically stable zinc orthostannate phase, typically reported to occur at temperatures above 500°C. 3 The inverse spinel structure of Zn 2 SnO 4 consist of a Zn atom that is centered at alternating tetrahedral of ZnO 4 with four nearest-neighbor oxygen (O) atoms, while equal numbers of Zn and Sn atoms located at the center of octahedral ZnO 6 or SnO 6 with six nearest-neighbors O atoms in the lattice. 6 Because of their superior electrical conductivity and high visible light transparency, 7 ZTO is also considered as a potential semiconductor material for solar cells, [8][9][10] photocatalysis, 11,12 gas sensors, [13][14][15] electrode material for Li-ion batteries 16 , and transparent conducting substrates 17 etc.…”

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confidence: 99%

Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Bora

Al-Hinai

et al. 2015

J. Am. Ceram. Soc.

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Temperature-dependent in-situ Raman spectroscopy is used to investigate the phase transformation of zinc metastannate (ZnSnO 3 ) to zinc orthostannate (Zn 2 SnO 4 ) induced upon annealing in the ambient. ZnSnO 3 microcubes (MCs) were synthesized at room temperature using a simple aqueous synthesis process, followed by characterization using electron microscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, and thermogravimetric analysis (TGA). Annealing of the ZnSnO 3 MCs was carried out up to 1000°C, while recording the Raman spectra in-situ at regular intervals. Phase transformation from metastannate to orthostannate was found to begin around 500°C with an activation energy of~0.965 eV followed by the recrystallization into the inverse spinel orthostannate phase at~750°C. Results from this study provide detailed understanding of the phase transformation behavior of perovskite ZnSnO 3 to inverse spinel Zn 2 SnO 4 upon thermal annealing.

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confidence: 99%

Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Bora

Al-Hinai

et al. 2015

J. Am. Ceram. Soc.

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“…This is consistent with previously reported ZTO TFTs with an atomic ratio of zinc:tin of either 2:1 or 1:1 by rf magnetron sputtering. 20,30,54 In our work, ZTO TFTs (50% Sn) which have an actual tin content of 63% can no longer be turned off, while ZTO Fig. 7(b)).…”

Section: à2mentioning

confidence: 74%

“…2016) deposited by rf magnetron sputtering from ceramic targets but is less pronounced (up to a factor of 1.3). 6,7,11,54 Preferential sputtering is a common phenomenon whenever a target containing two or more elements is subjected to a particle impact, and it arises from the differences in mass, chemical binding and bombardment-induced Gibbsian segregation which are in turn related to the sputtering yield. 55 Using 500 eV Ar þ ion as the sputtering gas, the sputtering yield of elemental tin and zinc are estimated to be 1.56 and 4.6, respectively.…”

Section: -4mentioning

confidence: 99%

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Niang

Cho

Heffernan

et al. 2016

Journal of Applied Physics

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The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ∼90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec−1, and a field effect mobility of 15 cm2 V−1 s−1, which is a sharp increase from 0.8 cm2 V−1 s−1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V−1 s−1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec−1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

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“…Zn-Sn-O (ZTO) is a low-cost indium-free alternative transparent amorphous oxide semiconductor with excellent electrical properties for TFT applications. 3,12,13 Recently we have demonstrated bipolar resistive switching in solution-deposited ZTO memrsitors and found that the resistive switching was consistent with a combined filamentary/interfacial mechanism. 14 However, to better understand the switching mechanism for ZTO memristors we have fabricated devices using RF sputter-deposited ZTO in this study.…”

Section: Introductionmentioning

confidence: 85%

Bipolar resistive switching in an amorphous zinc tin oxide memristive device

Rajachidambaram

Murali

Conley

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >104 and long retention times of >104 s. Electrical characterization of the devices suggests that both filamentary and interfacial mechanisms are important for device switching. The authors have used secondary ion mass spectrometry to characterize the devices and found that significant interfacial reactions occur at the Al/ZTO interface.

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Characterization of amorphous zinc tin oxide semiconductors

Abstract: Abstract

Cited by 31 publications

References 47 publications

Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Bipolar resistive switching in an amorphous zinc tin oxide memristive device

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Characterization of amorphous zinc tin oxide semiconductors

Abstract: Abstract

Cited by 31 publications

References 47 publications

Phase Transformation of Metastable ZnSnO3 Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Phase Transformation of Metastable ZnSnO3 Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

Bipolar resistive switching in an amorphous zinc tin oxide memristive device

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Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy

Phase Transformation of Metastable ZnSnO₃ Upon Thermal Decomposition by In‐Situ Temperature‐Dependent Raman Spectroscopy