Characterization of aluminum selenide bi-layer thin film

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

doi:10.1063/1.5032352

Cited by 3 publications

(6 citation statements)

References 8 publications

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“…The optical curve was reported between 35 and 100 °C. [135] The calculated bandgap (using a 1:1 ratio, in the range of temperature specified) was around 2.1 eV (Figure 9). Adams et al, [136] have reported the formation of a stable heterojunction of AlSe onto Si(111) using molecular beam epitaxy, and with the hypothesis of depositing Al 2 Se 3 onto Si, they discovered that the structure that forms is indeed AlSe.…”

Section: Physical Propertiesmentioning

confidence: 98%

“…Long times of purge, in thermal ALD, are impractical if the thickness required is large. Boolchandani et al [135] have studied the formation of Al-Se thin layer and reported both bilayer and multilayer films.…”

Section: Physical Propertiesmentioning

confidence: 99%

“…Boolchandani et al. [ 135 ] have studied the formation of Al–Se thin layer and reported both bilayer and multilayer films. In these studies, they prepared AlSe layers using a thermal evaporation technique, and studied both the electrical and optical properties.…”

Section: Aluminum Chalcogenidesmentioning

confidence: 99%

“…[133] Aluminum sulfides still draw interest because of new applications such as Al-ion batteries, and in semiconducting devices (aluminum chalcogenides are in most part wide bandgap semiconducting materials). [134][135][136] The advantage of using aluminum chalcogenides is given by their affordable costs, their stability, and robustness with respect to Li analogues [137] or as anodes for Li-S batteries. [138] Tl chalcogenides are yet interesting because of interesting properties such as thermoelectric conductivity.…”

Section: Introductionmentioning

confidence: 99%

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A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

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been permitted. [4][5][6][7] Although, the employment of 2D nanosheets, especially in biomedicine, is still in its primordial state and has permitted to the realization of novel advancements in such applications. [8][9][10] It needs to be highlighted that some of these compounds present mild cytotoxicity and dose-dependent induced metabolic disadvantages. [11,12] Albeit direct use in the body is not yet advisable, it is possible to indirectly employ these compounds in the creation of wearable devices for tracking vital parameters. [13] Research on such topics, both from fundamental and applied studies has led to an exponential increase in the number of publications during the last 10 years (Figure 1c). [14] One of the pivotal characteristics of 2D nanostructures is their high specific area-to-thickness ratio, which can be easily modulated through delamination processes. [15] Ultimately, the smallest crystals that can be created are mono-or bi-atomic layers. To understand how the nanocrystals form from bulk, it is important to comprehend the main characteristic features of the macrocrystals. A layered crystal lattice is presented in Figure 2. These crystals are governed by strong, covalent (or ionic) in-plane bonds, which are often arranged into hexagonal honeycombs. These individual sheets are linked together by inter-plane (inter-layer), and weak van der Waals (vdW) forces. The bond energies between the in-plane atoms, are the major contribution on the total energy of the lattice, leaving weak inter-plane interactions with relatively large distances (i.e., about few hundred picometers in graphene). These large inter-planar spaces are suitable attack points for size reduction, [16][17][18] which requires an external energy input from a providing source in order to delaminate single-layer crystals.The in-plane honeycomb structure is responsible for electrical transport and associated phenomena. For instance, the great mobility of p-electrons and their delocalization on the surface allows excellent transport in graphene. [23,24] However, in some other electro-and photoactivated semiconductors based on 2D materials, the electrical transport on the surface is responsible for the hole-electron confinement. [25] It can also produce poor electrical conduction by 2D materials such as hexagonal boron nitride (hBN) and so making them electrical insulators (see Figure 1a). [26] These differences in the layersThe attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices...

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Section: Physical Propertiesmentioning

confidence: 98%

Section: Physical Propertiesmentioning

confidence: 99%

Section: Aluminum Chalcogenidesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

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“…Despite the fact that semiconducting chalcogenide glasses (SCGs) were discovered a long time ago (in 1956), they are still attracting considerable interest, with the focus mainly being on the electrical and optical properties of thin noncrystalline SCG films [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Effect of Corona Discharge on the Optical Properties of Thin-Film Cu–As2Se3 Structures

2020

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The effect that corona discharge has on holographic recording of diffraction gratings in a thin-film Cu−As 2 Se 3 structure deposited on glass by thermal vacuum evaporation is studied. The use of negative corona discharge during holographic recording enhances the holographic sensitivity of the Cu−As 2 Se 3 structure and the diffraction efficiency of inscribed gratings. Irradiation of the Cu−As 2 Se 3 structure with actinic light results in photodarkening in the spectral region in which the structure exhibits a strongly absorption, while the region characterized by a weaker absorption becomes more transparent. The effect of photoinduced transparency is enhanced if samples are treated using positive corona discharge and with negative corona discharge the effect is weakened. The experimental results are explained qualitatively, assuming the diffusion of Cu + ions into the As 2 Se 3 layer.

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Extended study into the prominence of aluminum content in controlling optical parameters, thermal properties, electrical conductivity and dielectric behavior of amorphous Al-Se-Te thin films for optoelectronic applications

Alqahtani¹,

Yakout²,

Shaaban³

et al. 2022

Optics & Laser Technology

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Characterization of aluminum selenide bi-layer thin film

Cited by 3 publications

References 8 publications

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Effect of Corona Discharge on the Optical Properties of Thin-Film Cu–As2Se3 Structures

Extended study into the prominence of aluminum content in controlling optical parameters, thermal properties, electrical conductivity and dielectric behavior of amorphous Al-Se-Te thin films for optoelectronic applications

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