Characterization of AlN thin film prepared by reactive sputtering

Yuan, Zhimin; Li, Lianbi; Ren, Zhanqiang; Cao, Ling

doi:10.1002/sia.6018

Cited by 9 publications

(6 citation statements)

References 15 publications

(22 reference statements)

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“…Comparing the layers in Figure 4d,e deposited in #9, the structure roots on ceramic start at a thickness of 3 µ m approximately, while on silicon the initial dense layer is significantly thinner. Reference [40] confirms the relation between evident aluminum excess and occurrence of vermicular structures. Obtained layer are characterized by a high light absorption in the UV region.…”

Section: Nitrogen To Argon Ratio 0%supporting

confidence: 58%

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Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

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This work compares the deposition of aluminum nitride by magnetron sputtering on silicon to multilayer ceramic substrates. The variation of sputter parameters in a wide range following a fractional factorial experimental design generates diverse crystallographic properties of the layers. Crystal growth, composition, and stress are distinguished because of substrate morphology and thermal conditions. The best c-axis orientation of aluminum nitride emerges on ceramic substrates at a heater temperature of 150 • C and sputter power of 400 W. Layers deposited on ceramic show stronger c-axis texture than those deposited on silicon due to higher surface temperature. The nucleation differs significantly dependent on the substrate. It is demonstrated that a ceramic substrate material with an adapted coefficient of thermal expansion to aluminum nitride allows reducing the layer stress considerably, independent on process temperature. Layers sputtered on silicon partly peeled off, while they adhere well on ceramic without crack formation. Direct deposition on ceramic enables thus the development of optimized layers, avoiding restrictions by stress compensating needs affecting functional properties.

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Section: Nitrogen To Argon Ratio 0%supporting

confidence: 58%

“…On both substrates the layers appear densely with vermicular structures on top, originated from the aluminum excess during deposition. These features are of sub-stoichiometric aluminum rich composition [40]. Their size differs and they are larger when layers are deposited on LTCC.…”

Section: Nitrogen To Argon Ratio 0%mentioning

confidence: 99%

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

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“…The refractive index of AlN films depends on several factors, such as the Al/N atomic ratio, atomic density, and crystal quality. [9,30,31] To determine the Al/N atomic ratio of the film, energy dispersion spectroscopy (EDS) measurement was performed. As shown in Figure 6b, the Al/N atomic ratio is about 0.9:1, which increases slightly with increasing sputtering power.…”

Section: Resultsmentioning

confidence: 99%

“…Liu et al [8] grew AlN with high c-axis orientation by RF sputtering on Si (100) substrate, and AlN (002) full width at half maximum (FWHM) was measured to be 3.1°. Zang et al [9] prepared the AlN (002) film on Si (100) substrate by DC sputtering. Pandey et al [10][11][12] reported AlN films on Si (100) substrate with FWHM of 8.1°.…”

Section: Introductionmentioning

confidence: 99%

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Yin

Han

Xing

et al. 2022

Crystal Research and Technology

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Aluminum nitride (AlN) films are prepared on Si (100) substrates by pulsed direct current magnetron sputtering. The effect of sputtering power on the crystal quality, residual stress, surface morphology, and optical properties of AlN films is comprehensively studied using X‐ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), atomic force microscope, and ellipsometer. It is found that the AlN film quality is strongly impacted by the sputtering power. When the sputtering power increases to 3 kW, the full width at half maximum of the AlN (002) rocking curve decreases to 2.66°. And the film crystal quality does not change significantly when the sputtering power exceeds 3 kW. Fourier transform infrared spectrum analysis shows that with increasing sputtering power, the compressive stress of AlN films first increases and then decreases. The high sputtering power also results in smoother surface and better optical performance for the AlN films. This work can serve as an important reference for growing high‐quality AlN films on cost‐effective silicon (Si) substrates via sputtering, which can facilitate the development and commercialization of III‐nitride based photonics and electronics on AlN‐on‐Si substrates.

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“…Interestingly, the silkworm cocoon-like nanostructure was achieved by optimization of the process parameters, which strongly reduces the reflection and scattering of light because of the high amount of nanopores that uniformly distributed at the surface . Furthermore, the optimized process parameters in the reactive sputtering system play an important role in the realization of AlN films with specific properties. − Zang et al have deposited AlN films with a preferred orientation ⟨002⟩ via dc reactive sputtering, whose transmittivity has enhanced up to 90% in the visible and near-IR region . In their case, a desired crystallization quality of the films was obtained at a higher sputtering temperature and the flow ratio between N 2 and Ar was 1:3, resulting in an improved texture of the film.…”

Section: Introductionmentioning

confidence: 99%

Surface-Nanostructured Al–AlN Composite Thin Films with Excellent Broad-Band Antireflection Properties Fabricated by Limited Reactive Sputtering

Yuan

Döll

Romanus

et al. 2018

ACS Appl. Nano Mater.

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Al−AlN composite thin films with surface nanostructures possessing excellent broad-band antireflection properties can be simply fabricated by using a simple sputtering-based method, namely, limited reactive sputtering at elevated temperature. A mixture of Ar and N 2 gases with limited gas flow of N 2 is used. During the process, the limited amount of the N ions and radicals can only consume some of the sputtered Al atoms for the formation of AlN, so that the Al−AlN composite thin film can finally be deposited on the substrate. Compared to the traditional cosputtering for composite deposition, which works necessarily with two or more targets simultaneously, here only a single Al target is required. When the substrate temperature is higher than 100 °C, surface nanostructures can be evolved because of the different diffusion kinetics of Al and AlN. The total reflection was reduced drastically (<10%) in the spectral range 300−2000 nm. The Al−AlN composite thin films exhibit also a good electric conductivity.

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Characterization of AlN thin film prepared by reactive sputtering

Cited by 9 publications

References 15 publications

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Surface-Nanostructured Al–AlN Composite Thin Films with Excellent Broad-Band Antireflection Properties Fabricated by Limited Reactive Sputtering

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