2016
DOI: 10.1007/s11664-016-4536-z
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Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

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Cited by 5 publications
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“…Frequency and width of fluctuations are effected from thickness of hetero structures, interface roughness and differences in the density of layers [14]. As can be seen, sharp dropping point is at about critical angle point 0.6.…”
Section: Resultsmentioning
confidence: 96%
“…Frequency and width of fluctuations are effected from thickness of hetero structures, interface roughness and differences in the density of layers [14]. As can be seen, sharp dropping point is at about critical angle point 0.6.…”
Section: Resultsmentioning
confidence: 96%