Characterization of Ag oxide thin films prepared by reactive RF sputtering

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

“…At low oxygen partial pressure of 8x10 -3 Pa, the binding energy of Ag 3d 5/2 was found to be 368.2 eV and it is shifted to lower energy of 367.7 eV at oxygen partial pressure 2x10 -2 Pa and 367.3 eV at higher oxygen partial pressure of 9x10 -2 Pa. Sant et al [24] reported that the Ag 3d 5/2 peaks of Ag, Ag 2 O and AgO occurred at 368.1, 367.7 and 367.4 eV respectively. According to the reported data, the Ag 3d 5/2 peaks of pure Ag, Ag 2 O and AgO were located in the range 368.0 -368.3 eV, 367.5 -367.8 eV and 367.2 -367.4 eV respectively [7,16,20,25]. The experimental results were in good agreement with reported in literature.…”

“…Her et al [6] incorporated silver oxide films into super resolution near field structures in optical memories. Thin films of silver oxide were deposited by several techniques such as thermal oxidation of silver films [7,8], thermal evaporation [9], pulsed laser deposition [10,11], sol-gel process [12], chemical vapour deposition [13], electro deposition [14], DC sputtering [15,16] and RF sputtering [17][18][19][20]. In the present work, RF magnetron deposition technique was employed for preparation of silver oxide films.…”

Catalytic Performance of Ag2O and Ag Doped CeO2 Prepared by Atomic Layer Deposition for Diesel Soot Oxidation

“…The spectrum showed core level binding energies at about 368.2 ± 0.1 eV and 374.2 ± 0.1 eV related to the Ag 3d 5/2 and Ag 3d 3/2 respectively with spin orbit separation of 6 eV [34]. Each Ag 3d level in Ag doped CeO 2 films can be deconvoluted into three peaks, with corresponding binding energies 368.2, 369.2, and 367.2 eV, which are consistent with those of Ag + , Ag 0 , and Ag 2+ (Table 3), allowing for the shift due to sample charging [35][36][37]. The estimated percentages of the three peaks, shown in Table 3, indicates that with increasing Ag doping concentration in CeO 2 films from 30:1 to 10:1, the Ag + oxidation state also grows from 38.4% to 85%, respectively.…”

Characterization of Silver Oxide Films Formed by Reactive RF Sputtering at Different Substrate Temperatures

“…Figure 4 shows a representative survey X-ray photoelectron spectrum of silver oxide films formed at 303 K. The spectrum showed the characteristic core level binding energies at about 368 and 374 eV related to the Ag 3d 5/2 and Ag 3d 3/2, respectively, due the spin-orbit splitting of energy levels, and peaks situated at 573 eV and 604 eV correspond to the core levels of Ag 3p 3/2 and Ag 3p 1/2, respectively, related to the Ag 2 O films [30]. [31] in reactive RF sputtered films. It is to be noted that Ag 2 O core level binding energy was in the range 367.6-367.8 eV and O 1s was in the range 529.2-529.5 eV, while in pure metallic silver the Ag 3d 5/2 was in the range 368.0-368.3 eV [10,31,32].…”

“…[31] in reactive RF sputtered films. It is to be noted that Ag 2 O core level binding energy was in the range 367.6-367.8 eV and O 1s was in the range 529.2-529.5 eV, while in pure metallic silver the Ag 3d 5/2 was in the range 368.0-368.3 eV [10,31,32]. From these studies it is revealed that the films formed at 303 K were of single phase Ag 2 O, while those deposited at 473 K were of mixed phase of Ag 2 O and metallic silver.…”