Characterization of acoustic vibration modes at GHz frequencies in bulk acoustic wave resonators by combination of scanning laser interferometry and scanning acoustic force microscopy

Liu, X.; Paulo, Álvaro San; Park, M.; Bokor, J.

doi:10.1109/memsys.2005.1453895

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…As is evident from the ANSYS simulation of Fig. 14 and the initial atomic force microscopy (AFM) measurements [30], the motion of a circular ring deviates from the ideal planar motion. The asymmetry introduced by the different metal electrodes that were used and the sloped sidewalls of the device produce out-of-plane deflections as seen in Figs.…”

Section: Quality Factormentioning

confidence: 95%

Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators

Piazza

Stephanou

Pisano

2006

J. Microelectromech. Syst.

561

307

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This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ringshaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Q max = 4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 Ω), and center frequencies that are lithographically defined. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore enabling the fabrication of arrays of high-performance microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of approximately 25 ppm/°C were also recorded for these resonators. Initial discussions on mass loading mechanisms induced by metal electrodes and energy loss phenomenon are provided. KeywordsAluminum nitride, contour-mode resonators, microelectromechanical systems (MEMS) resonators, piezoelectric resonators, radio-frequency (RF) MEMS This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. Abstract-This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ring-shaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Q max = 4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 ), and center frequencies that are lithographically defined. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore enabling the fabrication of arrays of high-performance microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of approximately 25 ppm C were also recorded for these resonators. Initial discussions on mass loading mechanisms induced by metal electrodes and energy loss phenomenon are provided.[ 2006-0019]Index Terms-Aluminum nitride, contour-mode resonators, microelectromechanical systems (MEMS) resonators, piezoelectric resonators, radio-frequency (RF) MEMS.

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Section: Quality Factormentioning

confidence: 95%