Characterization of absorption bands in Ti:sapphire crystals

Moulton, Peter F.; Cederberg, Jeffrey G.; Stevens, K. T.; Foundos, Greg; Košelja, M.; Preclíková, Jana

doi:10.1364/ome.9.002216

Cited by 37 publications

(34 citation statements)

References 36 publications

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“…Based on this observation the authors of Ref. [13] arrived at the conclusion that the Ti 3+ -Ti 4+ pair model of NIR absorption needs a revision.…”

Section: Introductionmentioning

confidence: 99%

“…In Secs. V and VI we answer a number of questions that arose in [13] and clarify the role of several factors that may increase the FOM such as an appropriate choice of the temperature of annealing, adding of certain compounds into the atmosphere or into the melt under the growth or annealing, co-doping with nonisovalent atoms. This analysis is another principal result of the paper.…”

Section: Introductionmentioning

confidence: 99%

“…The problem of NIR absorption was revisited recently in [13] where the absorption data in the range of wavelengths from 190 nm to 2000 nm were analyzed with reference to many Ti:sapphire samples of different origin. A sample with a large fraction of Ti 4+ (that was confirmed by a very weak absorption by this sample at λ = 490 nm) was used as a reference.…”

Section: Introductionmentioning

confidence: 99%

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Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Kravchenko

Fil

2020

Phys. Rev. Research

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We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of Ti-doped sapphire crystals with high figure-of-merit (FOM). The FOM of a given sample is defined as the ratio of the coefficient of absorption at the pump frequency to the coefficient of absorption at the working frequency of Ti:sapphire laser. It is one of standard specifications of commercial Ti:sapphire laser crystals. It is believed that FOM is proportional to the ratio of the concentration of isolated Ti 3+ ions to the concentration of Ti 3+-Ti 4+ pairs. We find that generally this ratio is in inverse proportion to the concentration of Ti 4+ isolated substitutional defects with the coefficient of proportionality that depends on the temperature at which the thermodynamically equilibrium concentration of defects is reached. We argue that in certain cases the inverse proportion between concentrations of Ti 3+-Ti 4+ and Ti 4+ may be violated. The role of codoping in the control of the charge state of dopants is analyzed. We show that codopants that form positively (negatively) charged defects may decrease (increase) the concentration of positively charged defects formed by the main dopants. To evaluate the effect of codoping it is important to take into account not only isolated defects but defect complexes formed by codopants, as well. In particular, we show that codoping of Ti:sapphire with nitrogen results in an essential increase of the concentration of Ti 4+ and in a decrease of the FOM, and, consequently, growth or annealing in the presence of nitrogen or its compounds is unfavorable for producing Ti:sapphire laser crystals. The approach developed can be used for determining appropriate growth and annealing conditions for obtaining doped crystals with the required characteristics.

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“…Based on this observation the authors of Ref. [13] arrived at the conclusion that the Ti 3+ -Ti 4+ pair model of NIR absorption needs a revision.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Kravchenko

Fil

2020

Phys. Rev. Research

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“…In earlier studies with cryogenic Yb:YLF, 10 s of pJ to few nJ pulses from Ti:Sapphire oscillators around 1018 nm were used as seed sources [3,24,25]. Ti:Sapphire systems provide broad tunability, but at this long-wavelength region, the resulting pulse energies are in the nJ range even for systems pumped with > 10 W of pump power [26][27][28][29][30][31][32]. Moreover, despite recent promising progress in direct diode-pumping [33], the commercial Ti:Sapphire systems still mostly rely on pumping with other lasers, making the systems rather complex, inefficient, bulky and high-cost.…”

Section: Introductionmentioning

confidence: 99%

Cavity-dumped nanosecond Cr:LiSAF laser in the 985–1030 nm region for versatile seeding of Yb-based amplifiers

2022

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We report nanosecond (ns) cavity-dumped operation of a low-cost diode-pumped Cr:LiSAF laser around 1000 nm. The system is pumped with one 1-W single-emitter multimode diode at 665 nm. A Pockell cell (PC) and thin-film-polarizer (TFP) combination placed inside the cavity chops up an adjustable portion of the intracavity power and creates a variable time-dependent output coupler. Via adjusting the length and magnitude of the electrical signal going into the PC, output pulses with pulsewidths in the 2.5–500 ns range and with peak power levels above 10 W are generated at repetition rates up to 100 kHz. The central wavelength of the pulses could be smoothly tuned in the 985–1030 nm region, and is only limited by the anti-reflection coating bandwidth of the current PC and TFP. This versatile nanosecond source with 100 nJ level energies could serve as an attractive low-cost seed source for Yb-based amplifiers, including the cryogenic Yb:YLF systems.

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“…In particular, their data on 800-nm-peak shows a complex line shape, with a lower limit set by Ti 3+ pair absorption. Thus they demonstrated that the maximum possible Figure-of-Merit for Ti:sapphire reduces as the doping level increases [5].V. Fedorov et al report on the characterization of energy transfer in iron-chromium co-doped ZnSe middle-infrared laser crystals.…”

mentioning

confidence: 99%

Focus issue introduction: advanced solid-state lasers

Boulanger¹,

Goodno²,

Jiang³

et al. 2019

Opt. Express

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This joint issue of Optics Express and Optical Materials Express features 28 state-ofthe-art articles written by authors who participated in the international "Advanced Solid State Lasers" conference, held in Boston November 4-8, 2018. This review provides a summary of these articles that cover the spectrum of solid state lasers from materials research to sources and from design innovation to applications.

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Characterization of absorption bands in Ti:sapphire crystals

Cited by 37 publications

References 36 publications

Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Control of charge state of dopants in insulating crystals: Case study of Ti-doped sapphire

Cavity-dumped nanosecond Cr:LiSAF laser in the 985–1030 nm region for versatile seeding of Yb-based amplifiers

Focus issue introduction: advanced solid-state lasers

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