Characterization of a Cu₂ZnSnS₄solar cell fabricated by sulfurization of metallic precursor Mo/Zn/Cu/Sn

Abstract

Various characterization methods are implemented to investigate the fundamental properties of a Cu2ZnSnS4 (CZTS) solar cell. The chemical distribution across the CZTS grain boundaries, the surface potential of CZTS absorber, the minority lifetime, the carrier collection length, diode ideality factor, dark saturation current, and series resistance are revealed in the characterization measurement. The short minority lifetime, high defect density, and large series resistance are confirmed and need to be addressed in the future work for further efficiency improvement.

Sentaurus modelling of 6.9% Cu2ZnSnS4 device based on comprehensive electrical & optical characterization

“…The net carrier density in CZTS bulk was derived from C-V scans with different frequencies as shown in Figure 2a. Several papers have reported that in polycrystalline materials, the presence of deep level defects can well enhance the capacitance response at inappropriate low frequencies resulting in misleading interpretation of net carrier density [20][21][22]. When AC angular frequency is slow enough, deep level defects could have sufficient time to respond, thereby adding enormous amount of extra charge to thin film [20].…”

Pure sulfide kesterite solar cells with cation substituted absorber and back contact intermediate layer

“…Kesterite thin films have been prepared using various vacuum-based techniques including sputtering [42][43][44][45], thermal evaporation [46][47][48], pulsed laser deposition [49,50].…”