2013 IEEE Energy Conversion Congress and Exposition 2013
DOI: 10.1109/ecce.2013.6646709
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Characterization of 4.5 kV/2.4 kA press pack IGBT including comparison with IGCT

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Cited by 14 publications
(5 citation statements)
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“…5.2, it is assumed in this paper that S cn is implemented by anti-parallel connection of two reverse-blocking IGCTs, such as those featured in [83]- [92]. Even though the IGCT is the preferred switch in applications with low switching frequencies, where the conduction power losses are dominant [84], [85], it is assumed to only be adopted for the high-efficiency links of the LMMC, due to its relatively high cost; the other switches are assumed to be of the IGBT type. Since terminal h is not used in the last network, switch S c(M−1) is not required.…”
Section: Discussionmentioning
confidence: 99%
“…5.2, it is assumed in this paper that S cn is implemented by anti-parallel connection of two reverse-blocking IGCTs, such as those featured in [83]- [92]. Even though the IGCT is the preferred switch in applications with low switching frequencies, where the conduction power losses are dominant [84], [85], it is assumed to only be adopted for the high-efficiency links of the LMMC, due to its relatively high cost; the other switches are assumed to be of the IGBT type. Since terminal h is not used in the last network, switch S c(M−1) is not required.…”
Section: Discussionmentioning
confidence: 99%
“…5.2, it is assumed in this paper that S cn is implemented by anti-parallel connection of two reverse-blocking IGCTs, such as those featured in [83]- [92]. Even though the IGCT is the preferred switch in applications with low switching frequencies, where the conduction power losses are dominant [84], [85], it is assumed to only be adopted for the high-efficiency links of the LMMC, due to its relatively high cost; the other switches are assumed to be of the IGBT type. Since terminal h is not used in the last network, switch S c(M−1) is not required.…”
Section: Discussionmentioning
confidence: 99%
“…The external clamping pressure should be determined by the total area of the chips, so as to ensure the electrical and mechanical properties of the Press-Pack IGBT device, reducing the thermal contact resistance and the electrical contact resistance between the components to a relatively low value. The stress should be around 12MPa [17] . The boundary conditions of the finite element simulation model are shown in Fig.…”
Section: Simulation Conditionsmentioning
confidence: 99%