Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Abstract

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

“…The temperature is set by a hot air furnace and confirmed by thermocouples located on the metal case of the devices. Others details of the experimental platform are given in .…”

“…Accurate powers PiN diodes temperature‐dependent models are necessary to design a power electronic circuit . The model proposed in is intended to simulate reverse recovery for instance: it is a critical operation of a power diode inside a converter.…”

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

“…Nowadays, the dynamic development of high-power electronic systems requires modern electronic components and devices that are characterized by improved electrical and thermal properties [1][2][3][4]. A new generation of junction field-effect transistors made of silicon carbide (SiC-JFETs) has appeared on the market as a result of technological progress in the construction of semiconductor devices [1,3,5].…”

“…Nowadays, the dynamic development of high-power electronic systems requires modern electronic components and devices that are characterized by improved electrical and thermal properties [1][2][3][4]. A new generation of junction field-effect transistors made of silicon carbide (SiC-JFETs) has appeared on the market as a result of technological progress in the construction of semiconductor devices [1,3,5]. SiC-JFETs are characterized by better static properties, i.e., higher values of absolute maximum ratings of operating currents, terminal voltages and dissipated power as well as dynamic properties related to short switching times [5][6][7].…”

Temperature dependence of normally off mode AlGaN/GaN heterostructure field‐effect transistors with p‐GaN gate

“…Figure 4 shows the temperature dependences of R on . The R on of p-GaN gate JHFETs, normally-off 4H-SiC vertical JFET [9] and normally-on 6H-SiC Lateral JFET [10] are plotted. The R on of SiC JFETs is higher than R on of p-GaN gate JHFETs 4H-SiC Vertical JFET [9] 6H-SiC Lateral JFET [10] …”